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Preparation method of znse nanocrystal, preparation method of znse nanocrystal and znse buffer layer

A nanocrystal, buffer layer technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem of narrow band gap, short-wave absorption and photoelectric conversion response effects, and pollution limit CIGS solar cells Large-scale development and other problems, to achieve the effect of no voids and cracks, avoiding cadmium pollution, and simple preparation process

Active Publication Date: 2018-01-19
SHENZHEN DANBANG INVESTMENT GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as we all know, cadmium is a heavy metal poisonous element, and the pollution problem greatly limits the large-scale development of CIGS solar cells.
In addition, the band gap of CdS is 2.4eV, and the band gap is narrow, which has a certain influence on the short-wave absorption and photoelectric conversion response.

Method used

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  • Preparation method of znse nanocrystal, preparation method of znse nanocrystal and znse buffer layer

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preparation example Construction

[0024] The invention provides a kind of preparation method of ZnSe nano crystal, in specific embodiment, this preparation method comprises the steps:

[0025] S1. Preparation of selenium precursor solution: make oleylamine, selenium simple substance and reducing agent into a reaction solution, heat and react to obtain a selenium precursor solution; in the reaction solution, the concentration of the selenium precursor solution is 0.25-1.5mol / L, the molar ratio of described reductant and described selenium element ≥ 1:1, and described reductant is dimethylamine borane or sodium borohydride;

[0026] S2. Prepare the zinc precursor solution: disperse the zinc source in the reaction solvent to prepare the zinc precursor solution, the molar ratio between the zinc source and the selenium element is 1:1-1:1.5, and the reaction solvent Oleylamine or a mixed solvent of octadecene and stearic fatty acid;

[0027] S3. Preparation of ZnSe nanocrystals: In an anhydrous and oxygen-free sys...

Embodiment 1

[0048] A preparation method for ZnSe nanocrystals, comprising the steps of:

[0049]S1. Preparation of selenium precursor solution: Add 1.5mL of oleylamine, 1.5mmol of selenium powder and 0.75mmol of dimethylamine borane into a 25mL flask, heat to 130°C while stirring, and after 5 minutes, the selenium powder Dissolved, the color of the solution changed from colorless to dark brown, and then turned into a colorless and transparent selenium precursor solution. The temperature of the selenium precursor solution was lowered to 70° C. for later use.

[0050] S2. Preparation of zinc precursor solution: 1.5 mmol of zinc acetylacetonate, 10 mL of octadecene and 3 mmol of hard fatty acid were added into a 50 mL three-necked flask.

[0051] S3. Preparation of ZnSe nanocrystals: place the three-neck flask in step S2 under a standard anhydrous and oxygen-free system (Schlenk system) to remove water and oxygen for 1 hour. Then the temperature was raised to 230°C. At this temperature, th...

Embodiment 2

[0055] A preparation method for a ZnSe buffer layer, comprising the steps of:

[0056] (1) The ZnSe nanocrystals prepared in Example 1 were dispersed in toluene at a solid-to-liquid ratio of 200 mg / mL to prepare a uniform and stable ZnSe nanocrystal ink.

[0057] (2) adopt the method for electrodeposition to deposit the absorption layer of CIGS thin-film solar cell on molybdenum glass, drip the ZnSe nano-crystal ink in step (1) on this absorption layer, scrape ZnSe nano-crystal ink with scraper to form a film . Then heat and dry at 100°C in a vacuum drying oven to form a dense, uniform zinc selenide film with a thickness of 50nm. The prepared zinc selenide buffer layer samples are stored at normal temperature and in a dry environment for future use. craft use.

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Abstract

The invention discloses a preparation method of ZnSe nanocrystal. The preparation method of the ZnSe nanocrystal comprises the following steps: S1, preparing selenium precursor solution, namely preparing a reaction solution by utilizing oleylamine, a selenium simple substance and a reducing agent, heating and reacting, and thus the selenium precursor solution is obtained, wherein concentration of the selenium precursor solution in the reaction solution is 0.25-1.5mol / L, the mole ratio of the reducing agent to the selenium simple substance is more than 1:1, and the reducing agent is dimethylamine borane or sodium borohydride; S2, preparing a zinc precursor solution, namely dispersing a zinc source in a reaction solvent to obtain the zinc precursor solution, wherein mole ratio of the zinc source to the selenium simple substance is 1:(1-1.5), and the reaction solvent is oleylamine or a mixed solvent of octadecene and stearic acid; and S3, preparing ZnSe nanocrystal, namely heating the zinc precursor solution obtained in the step S2 to 150-350 DEG C in an anhydrous oxygen-free system, then injecting the selenium precursor solution obtained in the step S1 into the zinc precursor solution, and reacting for at least 10 minutes, and thus the ZnSe nanocrystal is obtained. By adopting the preparation method of the ZnSe nanocrystal, high-quality ZnSe nanocrystal can be prepared.

Description

technical field [0001] The invention relates to the preparation of nanometer materials and buffer layers of thin-film solar cells, in particular to a preparation method of ZnSe nano crystals, a preparation method of ZnSe nano crystals and a ZnSe buffer layer. Background technique [0002] Semiconductor nanomaterials have broad application prospects due to their unique photoelectric properties, such as ZnSe, which is an important metal selenide. At present, the liquid phase preparation of ZnSe nanocrystals generally requires the use of tri-n-octylphosphine (TOP) Or organic phosphine compounds such as trioctylphosphine oxide (TOPO), but TOP and TOPO are highly toxic substances, unstable in nature, easy to oxidize and expensive, and limited by other conditions, ZnSe nanocrystals prepared by existing preparation methods The lower quality is not conducive to the application of ZnSe nanocrystals. [0003] In thin-film solar cells such as CIGS thin-film solar cells, the buffer lay...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00H01L31/032H01L31/18
CPCC01B19/007C01P2002/30C01P2002/72C01P2004/62C01P2004/64H01L31/032H01L31/1828Y02P70/50
Inventor 刘萍
Owner SHENZHEN DANBANG INVESTMENT GROUP
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