Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method of directly implementing dip-pen nanolithography on hydrophobic substrate

A hydrophobic substrate and nanotechnology, applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve problems such as limiting application fields, achieve the effects of expanding application fields, reducing packaging costs, and saving manufacturing time and costs

Inactive Publication Date: 2015-04-08
SHANGHAI INST OF APPLIED PHYSICS - CHINESE ACAD OF SCI
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, the current dip pen nano-etching technology is implemented by using water molecules in high-humidity air to form a liquid bridge, and can only operate on some substances that can be dissolved in water, which greatly limits the application field of this technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of directly implementing dip-pen nanolithography on hydrophobic substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Using the NP-S type AFM tip, the dip pen nano-etching technique was implemented in toluene saturated vapor. The hydrophobic substrate employed was graphite, the force was 20 nN, and the ink was polymethyl methacrylate. When the needle tip stayed on the graphite surface for 10 seconds, the needle tip was lifted up and imaged, and a smooth bright spot appeared on the graphite surface, indicating that the nanostructure was successfully prepared.

Embodiment 2

[0025] Using the NSC-18 AFM tip, the dip pen nano-etching technique was implemented in ethanol saturated vapor. The hydrophobic substrate used is polydimethylsiloxane and the ink is polyvinylpyrrolidone. The residence time of the needle tip on the substrate surface was 10 seconds, and the applied force was 20 nN. Then lift the needle tip and image it, you can see a smooth bright spot on the surface of the substrate, indicating that the nanostructure has been successfully prepared.

Embodiment 3

[0027] Using the NSC-18 AFM needle tip, the dip pen nano-etching technique was implemented in the saturated vapor of ethanol / water 1:1. The hydrophobic base used is polydimethylsiloxane and the ink is polyethylene glycol. The residence time of the needle tip on the substrate surface was 10 seconds, and the applied force was 20 nN. Then lift the needle tip and image it, you can see a smooth bright spot on the surface of the substrate, indicating that the nanostructure has been successfully prepared.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method of directly implementing dip-pen nanolithography on a hydrophobic substrate. The method includes: sealing an AFM (automatic force microscopy) tip and the hydrophobic substrate in a space filled with organic solvent vapor, forming a liquid bridge between the AFM tip and the hydrophobic substrate by means of adsorption of the organic solvent vapor on the AFM tip and the hydrophobic substrate, and transferring substances adsorbed on the AFM tip in advance to the surface of the hydrophobic substrate, so that a hydrophobic nano structure is prepared. By taking the advantage of the organic solvent which is easy to adsorb on the hydrophobic surface, high-humidity air in the prior art is replaced by the organic solvent steam, the hydrophobic nano structure is prepared by directly implementing the dip-pen nanolithography on the hydrophobic substrate, and accordingly manufacturing procedures are reduced. In addition, the defect that an existing hydrophilic nano structure is prone to adsorption of moisture in the air is overcome by the hydrophobic nano structure, higher stability is achieved, reduction of packaging cost of nano devices is benefited, and usability of the nano devices is improved while service lives of the nano devices are prolonged.

Description

technical field [0001] The invention relates to the field of nano-manufacturing, in particular to a method for directly implementing dip-pen nano-etching technology on a hydrophobic substrate. Background technique [0002] Dip pen nano-etching technology is a manufacturing technology that uses the liquid bridge formed between the tip of the atomic force microscope and the substrate to transfer the substance adsorbed on the surface of the tip to the surface of the substrate to prepare nanostructures. It has the advantages of accurate positioning, high resolution, and graphics can be designed arbitrarily. All current dip pen nanolithography techniques are performed in high-humidity air to ensure the formation of a liquid bridge between the tip and the substrate. This requires that the substrate must be hydrophilic, making it more conducive to the adsorption of water molecules in the air. [0003] For hydrophobic substrates, it must be modified in advance in order to successf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00B82Y40/00
Inventor 杨海军张琛侯铮迟胡钧
Owner SHANGHAI INST OF APPLIED PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products