Practical saturable absorption device based on black phosphorus

Abstract

The invention relates to a practical saturable absorption device based on black phosphorus and belongs to the field of saturable absorption devices of laser devices. The practical saturable absorption device based on the black phosphorus is formed by combining four layers of materials or mutual combining three layers of the four layers of materials or combining the four layers of materials combined mutually and functional insertion layers added on the upper portion and the lower portion of the four layers of materials at will or combining the saturable absorption layers and any one layer of materials or combining the saturable absorption layers, and each saturable absorption layer comprises at least one of a black phosphorus film, black phosphorus nano lamella particles, black phosphorus ramifications and functionalization black phosphorus. According to the practical saturable absorption device based on the black phosphorus, the application of Q regulation and mode locking of the laser device, optical signal processing and the like is achieved, and more importantly, the effect that the modulation depth can be flexibly regulated by giving play to the property of the black phosphorus is achieved.

Description

technical field [0001] The invention relates to a practical saturable absorption device based on black phosphorus, which belongs to the field of saturable absorption devices of lasers. [0002] Background technique [0003] The main saturable absorber device used in the market today is the semiconductor saturable absorber mirror (SESAM). However, semiconductor saturable absorber mirrors have many disadvantages that are difficult to overcome. First, SESAM requires a complex and expensive clean room-based manufacturing system with complex manufacturing processes and high costs; second, due to the inherent bandgap of III-IV semiconductors, the saturated absorption spectrum is narrow and basically limited to the near-infrared band. 1. In the far-infrared band, there is currently no SESAM available; third, the optical damage threshold of SESAM is also very low, making it difficult to apply in the field of high-power lasers. [0004] In recent years, graphene has been found to ...

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Problems solved by technology

However, when making SWCNT saturable absorbers, it is difficult to disperse due to its easy clustering; and its inhomogeneous chiral properties have inherent problems in the precise control of the optical properties of saturable absorbers, and limit the bandwidth of saturable absorption.

When using graphene as a saturable absorber, although it has broadband saturable absorption characteristics due to its zero band gap, the light absorption of single-layer graphene is low (2.3%), which is difficult to apply in lasers. It is very difficult to realize the multi-layer high-quality process with existing technology. In the preparation process, there are often problems such as uneven distribution of film layers, which leads to increased non-saturation loss and high laser pumping threshold.

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