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Structured arrangement manometer coarsened sapphire substrate and preparation method

A sapphire substrate, nanotechnology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low light extraction efficiency of GaN-based LEDs, achieve enhanced light extraction efficiency and light output power, high light extraction efficiency, and improve light The effect of the probability of escape

Inactive Publication Date: 2015-03-25
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The present invention aims at the problem that the light extraction efficiency of GaN-based LEDs (light-emitting diodes) prepared by the existing patterned sapphire substrates is low, and provides a regular arrangement of nano-coarse substrates that can obtain higher light extraction efficiency GaN-based LEDs. sapphire substrate and its preparation method, and at the same time provide a preparation method of the sapphire substrate

Method used

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  • Structured arrangement manometer coarsened sapphire substrate and preparation method
  • Structured arrangement manometer coarsened sapphire substrate and preparation method
  • Structured arrangement manometer coarsened sapphire substrate and preparation method

Examples

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Embodiment 1

[0041] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern, and use a mixed solution of sulfuric acid and phosphoric acid Wet etched sapphire. A micron-scale figure 1 is prepared; the micron-scale figure is a truncated cone, the height of which is 1.5 μm, and the diameter of the bottom surface is 2 μm.

[0042] (2) The substrate is cleaned, and then a silicon dioxide film with a thickness of 200 nm is deposited on the micron-scale pattern 1 .

[0043] (3) Clean the substrate, then deposit a silver film with a thickness of 100nm on the silicon dioxide film, and anneal in the air at a temperature of 250 degrees for 1000 seconds, so that the silver film is agglomerated into nanoparticles.

[0044] (4) transfer the nanoparticle pattern to the silicon dioxide film by ICP dry etching pattern transfer method, and use sulfur hexafluoride as the etching gas. ...

Embodiment 2

[0049] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern; use a mixed solution of sulfuric acid and phosphoric acid Wet etched sapphire. Micron-scale pattern 1 is prepared; the micron-scale pattern is a square prism, the height of the pattern is 10 μm, the diameter of the bottom surface (ie, the longest diagonal line of the bottom surface) is 10 μm, and the shortest diagonal line of the bottom surface is 6 μm.

[0050] (2) The substrate is cleaned, and then a silicon dioxide film with a thickness of 1000 nm is deposited on the micron-scale pattern 1 .

[0051] (3) Re-deposit a silver film with a thickness of 200nm on the silicon dioxide film in step (2); anneal in oxygen at a temperature of 900 degrees for 5000s to make the silver film agglomerate and become nanoparticles.

[0052] (4) transfer the nanoparticle pattern to the silicon dioxide film...

Embodiment 3

[0057] (1) Deposit a layer of silicon dioxide mask on the sapphire substrate; coat a layer of photoresist on the mask layer, use ICP equipment to etch the mask layer to form a mask pattern; use a mixed solution of sulfuric acid and phosphoric acid Wet etched sapphire. Micron-scale pattern 1 is prepared; the micron-scale pattern is a pentagonal prism with a height of 10 μm and a bottom diameter of 25 μm (the diameter of the bottom surface of the prism, that is, its longest diagonal).

[0058] (2) depositing a silicon dioxide film with a thickness of 500nm on the micron-scale pattern formed in step (1);

[0059] (3) Re-deposit a silver film with a thickness of 300nm on the silicon dioxide film of step (2); anneal in air at a temperature of 2000 degrees for 200s to make the silver film agglomerate and become nanoparticles. Experiments have shown that the silver nanoparticles prepared under this condition have a pattern height of 500nm and a bottom diameter of 20nm.

[0060] (4)...

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Abstract

The invention relates to a structured arrangement manometer coarsened sapphire substrate and a preparation method. The sapphire substrate is provided with composite patterns formed by combining micron order patterns and nanometer order patterns, the nanometer order patterns are distributed on the micron order patterns, and the nanometer order patterns are distributed on the radiuses or the connecting lines of the gravity centers and the corners of the upper surfaces of the micron order patterns. The central points of the lower surfaces of the nanometer order patterns coincide with the central points of the radiuses or the centers of the connecting lines of the gravity centers and the corners of the upper surfaces of the micron order patterns. The nanometer order patterns on each micron order pattern are distributed symmetrically. The method comprises the steps that firstly, the micron order patterns are prepared on the sapphire substrate, and then the nanometer order patterns are prepared on the micron order patterns. By means of the structured arrangement manometer coarsened sapphire substrate and the preparation method, the propagation direction of light can be effectively changed, the probability of light overflow is increased, a light path can be effectively emitted out, the reflection of the patterns to light is enhanced, so that the propagation direction of the light is changed, and the light extraction efficiency and the light output power of a GaN-based LED with the sapphire substrate are improved.

Description

technical field [0001] The invention relates to a sapphire substrate with nano-roughened composite pattern for epitaxial growth of GaN crystal and a preparation method thereof, belonging to the technical field of semiconductor crystal preparation. Background technique [0002] GaN has the characteristics of wide direct bandgap, high electron saturation velocity, high breakdown electric field and high thermal conductivity, and has great application potential in the fields of optoelectronics and microelectronics. GaN and other Group III nitrides (InN, AlN) can form a ternary or quaternary solid solution, its forbidden band width is from 0.7eV to 6.28eV, and its emission wavelength is adjustable from infrared to ultraviolet. Get widely used. [0003] Due to the lack of large-scale GaN substrates, GaN thin films are generally grown by heteroepitaxy on substrates such as sapphire, silicon carbide, and silicon. Sapphire is currently the most commonly used substrate for commercia...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/22H01L33/007
Inventor 逯瑶曲爽王成新徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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