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Detection method for tellurium zinc cadmium wafer damage layer thickness

The technology of a cadmium zinc telluride wafer and a detection method, which are applied to measurement devices, instruments, optical devices, etc., can solve the problems of long time consumption, different corrosive liquid systems, unsuitable for rapid routine detection, etc., and achieve intuitive, accurate and practical results. high effect

Active Publication Date: 2015-03-11
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Invention patent CN 103017713A proposes a method for detecting the thickness of the damaged layer of chemically hard and brittle materials by using multiple chemical etching methods. The principle is to judge the damage of the wafer by using the different corrosion rates of the damaged area and the non-damaged area for the same etching solution Layer thickness, but repeated corrosion, time-consuming, slow efficiency, large error, not suitable for rapid routine detection
At the same time, soft and brittle CdZnTe crystal materials have very different properties in terms of damage layer generation than hard and brittle optical materials, and the corrosion liquid system is also completely different, and it is impossible to follow the steps

Method used

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  • Detection method for tellurium zinc cadmium wafer damage layer thickness
  • Detection method for tellurium zinc cadmium wafer damage layer thickness

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1 Take the cadmium zinc telluride wafer processed along the (111) plane, with a single crystal area of ​​10mm X 20mm.

[0028] 2 Clean the cadmium zinc telluride wafer with boiling absolute ethanol, then clean it with boiling isopropanol, take it out and dry it for later use.

[0029] 3 Use the Z-axis microscope to measure the original thickness of the wafer center point and record it as t 0 (um).

[0030] 4Protect the (111)A surface of the wafer with a mucous film, and the size of the film should fit the size of the single wafer as much as possible.

[0031] 5 Preparation of chemical thinning solution: liquid bromine with a mass concentration of 99.5%: methanol with a mass concentration of 99.7% by volume ratio is 1:99 to prepare a chemical thinning solution, at this time the volume fraction of 1% bromine methanol solution is obtained , Stir well and set aside.

[0032] 6 Prepare a transparent quartz beaker, put the sample to be tested into the beaker vertically, use the droppi...

Embodiment 2

[0041] 1 Take the cadmium zinc telluride wafer processed along the (111) plane, with a single crystal area of ​​20mm X 30mm.

[0042] 2 Clean the cadmium zinc telluride wafer with boiling absolute ethanol, then clean it with boiling isopropanol, take it out and dry it for later use.

[0043] 3 Use a Z-axis microscope to measure the original thickness of the center point of the wafer and record it as t0 (um).

[0044] 4Protect the (111)A surface of the wafer with a mucous film, and the size of the film is as close as possible to the size of the single wafer.

[0045] 5 Preparation of chemical thinning solution: liquid bromine with a mass concentration of 99.5%: methanol with a mass concentration of 99.7% by volume ratio is 3:97 to prepare a chemical thinning solution. At this time, a 3% bromine methanol solution is obtained , Stir well and set aside.

[0046] 6 Prepare a transparent quartz beaker, put the sample to be tested into the beaker vertically, use the dropping funnel to slowly ...

Embodiment 3

[0055] 1 Take the cadmium zinc telluride wafer processed along the (111) plane, with a single crystal area of ​​30mm X 40mm.

[0056] 2 Clean the cadmium zinc telluride wafer with boiling absolute ethanol, then clean it with boiling isopropanol, take it out and dry it for later use.

[0057] 3 Use the Z-axis microscope to measure the original thickness of the wafer center point and record it as t 0 (um).

[0058] 4Protect the (111)A surface of the wafer with a mucous film, and the size of the film is as close as possible to the size of the single wafer.

[0059] 5 Preparation of chemical thinning solution: liquid bromine with a mass concentration of 99.5%: methanol with a mass concentration of 99.7% by volume ratio is 5:95 to prepare a chemical thinning solution, and the volume fraction of bromine methanol solution with 5% is obtained at this time , Stir well and set aside.

[0060] 6 Prepare a transparent quartz beaker, put the sample to be tested into the beaker vertically, use the d...

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Abstract

The invention discloses a detection method for tellurium zinc cadmium wafer damage layer thickness. Chemical gradient thinning is performed on the B surface of a water (111) for 10-30min by using a bromine methanol solution of volume fraction of 1%-5% firstly so that a sample of which the surface is an inclined surface is acquired; and then wafer defects are disclosed by using Everson corrosive liquid, observation is performed by using an optical microscope under the field of view of 100 times, the position at which a damage layer is just completely removed is confirmed, difference of wafer thickness before and after removal of the damage layer is compared and thickness of the damage layer is calculated. Advantages of the method are that (1) thickness of the damage layer is judged via observing morphology of the defects of the surface of the wafer so that the result is visual and accurate; (2) and wafer damage layer thickness detection can be completed within 1h without multiple times of corrosion or multiple times of detection so that the method is convenient, rapid and high in practicality.

Description

Technical field [0001] The invention relates to a method for detecting the thickness of a damaged layer of a semiconductor material, in particular to a method for detecting the thickness of a damaged layer of a cadmium zinc telluride wafer. Background technique [0002] The cadmium zinc telluride (CdZnTe, CZT) crystal and the mercury cadmium telluride lattice constant have an excellent match, which can minimize the misfit dislocation density between the mercury cadmium telluride material epitaxial layer and the substrate, which is a mercury cadmium telluride infrared The substrate of choice for focal plane detectors. The mercury cadmium telluride epitaxial material directly nucleates and grows on the cadmium zinc telluride substrate. Studies have shown that the dislocations in the cadmium zinc telluride substrate will cross to the HgCdTe epitaxial material along with the epitaxy. These defects will seriously affect the uniformity and blind element rate of the HgCdTe infrared foc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06
Inventor 虞慧娴孙士文杨建荣周昌鹤徐超周梅华王云
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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