Internal inlet gas gas-cooling device of coagulation enhancing block of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace

Abstract

The invention discloses an internal inlet gas gas-cooling device of a coagulation enhancing block of a polycrystalline silicon ingot furnace and a polycrystalline silicon ingot furnace, belonging to the technical field of photovoltaic solar polycrystalline silicon ingot furnaces. The internal inlet gas gas-cooling device comprises a furnace top lid (2), a gas inlet tube lid (4), an internal gas inlet tube I (5), an internal gas inlet tube II (9), an internal gas inlet tube III (10), an internal gas inlet tube IV (14) and a coagulation enhancing block (15), wherein the internal gas inlet tube I (5) passes through a small gas inlet (20) of the gas inlet tube lid (4); the internal gas inlet tube IV (14) extends to a central hole (16) of the coagulation enhancing block (15). By virtue of an unique structural design, the internal inlet gas gas-cooling device of the coagulation enhancing block of the polycrystalline silicon ingot furnace disclosed by the invention can be used for introducing cooling gas into the coagulation enhancing block (15) to cool the coagulation enhancing block (15), so that the heat dissipation capability of the coagulation enhancing block (15) is improved, and therefore, the cooling and crystallization rate of silica melt in a crucible can be increased, and the directional solidification efficiency is improved. Meanwhile, the silica melt is enabled to form considerable super-cooling degree, so that a proper silicon twin crystal structure is produced, and the ingot quality is improved.

Description

technical field [0001] The invention relates to a polysilicon ingot furnace, in particular to a polysilicon ingot furnace air-cooling device for the air intake inside the coagulation-assisting block, and a polysilicon ingot furnace including the air-cooling device for the air intake inside the clot-assisting block. technical background [0002] The growth of silicon crystals is generally divided into three methods: polycrystalline ingot, single crystal pulling and zone melting growth. With the large-scale application of crystalline silicon photovoltaic products, the solar-grade crystalline silicon wafer industry continues to develop and mature. The price of raw materials has gradually dropped, causing the profit margins of silicon wafer manufacturers to continue to shrink. Improving the quality of silicon wafers and reducing processing costs have become issues facing all solar silicon wafer manufacturers. The industrial chain of crystalline silicon photovoltaic power genera...

AI Technical Summary

Problems solved by technology

However, since the size of the furnace body remains unchanged after the transformation, the weight of the ingot after the transformation increases by 44% and 96% respectively, and the heat dissipation capacity at the bottom of the thermal field needs to be improved accordingly. The heat dissipation capacity of the existing heat insulation cage lifting technology is only slightly improved, so the It will greatly reduce the solidification rate during the ingot casting process

For example, the solidification time of G5 ingot is about 25 hours, but the solidification time of G6 ingot is about 40 hours, and the solidification time of G7 ingot is longer

This virtually increases the cost of silicon wafer production, and at the same time, during the solidification process, most of the silicon material is still in a high-temperature melting state, which also increases the risk of silicon leakage

In addition, due to the long contact time between the silicon ingot and the crucible, it will also cause a certain diffusion pollution of oxygen, which will reduce the quality of the crystal.

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