Growing method of large diameter float zone silicon crystal

A growth method, the technology of a zone-melting single crystal furnace, is applied in the growth field of a large-diameter zone-melting silicon single crystal, which can solve the problems of poor process repeatability and dislocation easily generated in the shoulder expansion process, and achieve good repeatability and increase the cost of production. Crystal rate and pass rate, the effect of reducing labor intensity

Inactive Publication Date: 2015-02-04
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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Problems solved by technology

[0003] The present invention overcomes the deficiencies of the prior art and provides a method for growing a large-diameter zone-fused silicon single crystal, which can effectively improve the problems of poor process repeatability and dislocation easily generated during shoulder expansion.

Method used

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  • Growing method of large diameter float zone silicon crystal
  • Growing method of large diameter float zone silicon crystal

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Embodiment 1

[0021] A method for growing 8-inch zone-melting silicon single crystals, using a zone-melting single-crystal furnace to carry out the following operations: (1) Furnace loading: the cleaned and corroded polycrystalline rods are loaded onto the crystal holder in the zone melting furnace, and the The seed crystal is loaded on the seed crystal fixed chuck; the diameter of the polycrystalline rod is 145-175mm.

[0022] (2) Evacuate, inflate, and preheat: place the preheating ring under the polycrystalline bar and above the zone melting coil, close the furnace door to vacuumize, and then pour in argon. When the pressure in the furnace reaches 2.6-6.5bar, Stop fast inflation, switch to slow inflation, open the exhaust valve to flow argon; after inflation, preheat the polycrystalline bar; the diameter of the zone melting coil is 280-350mm, and there are multiple steps above the needle eye coil And slope design, and there are 2-5 auxiliary openings with a length of 20-150mm, the thickn...

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Abstract

The present invention provides a growing method of a large diameter float zone silicon crystal, wherein the growing method comprises: loading into a furnace, evacuating, inflating, preheating, melting a material, seeding, growing narrow neck, expanding shoulder, maintaining, growing in an equal diameter manner, ending, cooling, and removing and cleaning the furnace. According to the present invention, with control of the generator output power, the polycrystal material descending speed and other parameters, the problems of easy stacking caused by difficult melting of the large diameter polycrystal material, and the low crystal forming rate caused by the poor process repeatability, the dislocation produced during the shoulder expanding process and the like under the conditions of the original process and method are overcome, the crystal forming rate and the qualification rate of the large diameter float zone silicon crystal are increased, the labor intensity is reduced, and the repeatability and the reproducibility are good.

Description

technical field [0001] The invention relates to a method for growing a large-diameter zone molten silicon single crystal. Background technique [0002] The suspension zone melting method includes several steps such as dismantling and cleaning the furnace, preheating, chemical material, seeding, neck thinning, shoulder expansion, shoulder rotation, maintenance, finishing, and furnace shutdown. The existing method is mainly controlled by the operator. The output power of the high-frequency generator and the downward speed of the polycrystalline material are used to control the growth of the silicon single crystal. The output power of the frequency generator and the downstream speed of the polycrystalline material are used to control the shoulder expansion process, and the output power and the downward speed of the polycrystalline material are artificially changed to complete the steps of shoulder turning, holding, and finishing. Using the existing method, there are too many h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B13/00C30B13/28C30B29/06
CPCC30B13/10C30B13/28C30B29/06
Inventor 沈浩平王彦君张雪囡靳立辉高树良刘嘉王遵义刘铮赵宏波刘琨郝大维吴峰楚占斌
Owner TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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