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A kind of preparation method of cadmium telluride thin film solar cell

A technology of solar cells and cadmium telluride, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as waste of raw materials, poor repeatability and discomfort

Active Publication Date: 2017-06-13
北京恒昀动力科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] For this reason, what the present invention is to solve is that in the production process of cadmium telluride thin-film solar cells, the existing methods for preparing Te-rich layers have serious waste of raw materials, poor repeatability and are not suitable for large-scale industrial production. , Preparation method of cadmium telluride thin film solar cell with controllable process

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  • A kind of preparation method of cadmium telluride thin film solar cell
  • A kind of preparation method of cadmium telluride thin film solar cell
  • A kind of preparation method of cadmium telluride thin film solar cell

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Embodiment 1

[0038] A method for preparing a cadmium telluride thin-film solar cell described in this embodiment comprises using glass as a transparent substrate, sequentially preparing a TCO layer, a CdS layer, a CdTe layer on the transparent substrate, and preparing a Te-rich layer on the CdTe layer. , preparing a back contact layer and a back electrode layer sequentially on the Te-rich layer.

[0039] Wherein, the preparation method of the TCO layer, the CdS layer, the CdTe layer, the back contact layer and the back electrode layer refers to the prior art, which can be obtained by physical vapor deposition, closed space sublimation, and vapor transport deposition. , sputtering method, electrolytic deposition method, spray deposition method, organic metal chemical vapor deposition method, screen printing deposition method, chemical bath deposition method and other methods, the preferred embodiment of the present invention is specifically:

[0040] S1. Deposit the transparent conductive l...

Embodiment 2

[0045] A method for preparing a cadmium telluride thin-film solar cell described in this embodiment comprises using glass as a transparent substrate, sequentially preparing a TCO layer, a CdS layer, a CdTe layer on the transparent substrate, and preparing a Te-rich layer on the CdTe layer. , preparing a back contact layer and a back electrode layer sequentially on the Te-rich layer.

[0046] Wherein, the preparation method of the TCO layer, the CdS layer, the CdTe layer, the back contact layer and the back electrode layer refers to the prior art, which can be obtained by physical vapor deposition, closed space sublimation, and vapor transport deposition. , sputtering method, electrolytic deposition method, spray deposition method, organic metal chemical vapor deposition method, screen printing deposition method, chemical bath deposition method and other methods, the preferred embodiment of the present invention is specifically:

[0047] S1. Prepare a TCO layer and a CdTe layer...

Embodiment 3

[0052] A method for preparing a cadmium telluride thin-film solar cell described in this embodiment comprises using glass as a transparent substrate, sequentially preparing a TCO layer, a CdS layer, a CdTe layer on the transparent substrate, and preparing a Te-rich layer on the CdTe layer. , preparing a back contact layer and a back electrode layer sequentially on the Te-rich layer.

[0053] Wherein, the preparation method of the TCO layer, the CdS layer, the CdTe layer, the back contact layer and the back electrode layer refers to the prior art, which can be obtained by physical vapor deposition, closed space sublimation, and vapor transport deposition. , sputtering method, electrolytic deposition method, spray deposition method, organic metal chemical vapor deposition method, screen printing deposition method, chemical bath deposition method and other methods, the preferred embodiment of the present invention is specifically:

[0054] S1. Prepare a TCO layer and a CdTe layer...

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Abstract

The invention provides a method for preparing a cadmium telluride thin-film solar cell. The method is an improvement aiming at factors which have never been concerned or thought about by technicians in the field, the electron transport capacity of a p-type CdTe layer is improved in an energy excitation mode, the electron concentration of the p-type CdTe layer is increased in the energy excitation mode, and the purpose that a Te-enriched layer is effectively electrodeposited on the CdTe layer subjected to thermal treatment is achieved. Meanwhile, according to the method for preparing the cadmium telluride thin-film solar cell, the purpose that the proportion of Te / Cd in the Te-enriched layer is controllable is achieved with a cathode potential gradual change method, and the concentration of Te atoms increases in a gradient mode in the direction of being away from a substrate of the cadmium telluride thin-film solar cell.

Description

technical field [0001] The invention belongs to the field of thin-film solar cells, and in particular relates to a preparation method of a cadmium telluride solar cell. Background technique [0002] Cadmium telluride (CdTe) thin film solar cell is a thin film solar cell based on the heterojunction of p-type CdTe and n-type CdS. In recent years, CdTe thin-film solar cells have attracted much attention at home and abroad for their advantages such as high photoelectric conversion rate, low production cost, high stability, wide absorption spectrum, and recyclability after the end of life cycle. [0003] CdTe thin film solar cell is a photovoltaic device composed of sequentially depositing multiple layers of thin films on glass or other flexible substrates. The general standard CdTe thin film solar cell consists of five layers, as attached figure 1 , where the direction of the arrow is the direction of illumination. [0004] The first layer is a transparent conductive oxide (E...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1828H01L31/1864Y02E10/543Y02P70/50
Inventor 张征宇武卫兵李伟中
Owner 北京恒昀动力科技有限公司
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