Silicon dioxide etching solution and preparation method thereof

A technology of silicon dioxide and etching solution, which is applied in the direction of chemical instruments and methods, surface etching compositions, etc., can solve the problems of low precision, slow etching speed, and failure to meet customer needs, and achieve fast speed and high etching precision. Effect

Inactive Publication Date: 2014-11-26
JIANGYIN JIANGHUA MICROELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing silicon dioxide etching solution has many defects, such as slow etching speed and low precision, which cannot meet customer needs

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] The invention is described below by way of examples, but is not limited to the examples given.

[0011] (1) Electronic grade nitric acid is electrically heated and rectified, and the temperature is controlled at 110°C ± 10°C;

[0012] (2) the product obtained in step (1) is passed through a whitening reactor to remove nitrogen dioxide in the fraction with nitrogen, making it transparent and colorless;

[0013] (3) Put the product obtained in step (2) into a mixing tank, add an appropriate amount of ultrapure water, and stir for 30 minutes;

[0014] (4) the product obtained in step (3) is filtered through a filter of 0.2 μm to remove harmful particles with a particle diameter greater than 0.2 μm in the mixture to obtain this ultra-high-purity nitric acid;

[0015] The above-mentioned method for preparing ultra-high-purity nitric acid, wherein: the relative density of nitric acid in the step (1) is 1.40-1.42.

[0016] In the step (3), the concentration of nitric acid is...

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PUM

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Abstract

The invention discloses a silicon dioxide etching solution and a preparation method thereof. The silicon dioxide etching solution comprises the following compositions by weight: 20%-30% of an ammonium fluoride solution, 3%-6% of hydrofluoric acid, and the balance ultrapure water. The preparation method of the silicon dioxide etching solution provided by the invention includes: weighing certain amount of an ammonium fluoride solution, adding hydrofluoric acid under stirring, fully stirring the mixture for 15min; then adding the ultrapure water, and conducting stirring for 45min; and then filtering the prepared mixture by a 0.5micrometer filter to remove harmful particles with a particle size larger than 0.5micrometer from the mixture, thus obtaining the silicon dioxide etching solution. Through precise blending, impurities are removed from the etching solution product provided by the invention, the etching precision is high, and the speed is fast.

Description

technical field [0001] The invention relates to an etching solution and a preparation method thereof, in particular to a silicon dioxide etching solution and a preparation method thereof. Background technique [0002] Electronic chemicals generally refer to special chemicals for the electronics industry, while ultra-high-purity wet electronic chemicals mainly include chemicals for integrated circuits and discrete devices, chemicals for crystalline silicon solar energy, and chemicals for flat panel displays. High quality requirements, strong functionality, high cleanliness requirements for production and use environments, and more pure products. The existing silicon dioxide etching solution has many defects, such as slow etching speed and low precision, which cannot meet customer needs. Contents of the invention [0003] The invention provides a silicon dioxide etching solution and a preparation method thereof, which can improve the etching speed and precision to meet the ...

Claims

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Application Information

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IPC IPC(8): C09K13/08
Inventor 殷福华朱龙邵勇
Owner JIANGYIN JIANGHUA MICROELECTRONICS MATERIAL
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