Silicon dioxide etching solution and preparation method thereof
A technology of silicon dioxide and etching solution, which is applied in the direction of chemical instruments and methods, surface etching compositions, etc., can solve the problems of low precision, slow etching speed, and failure to meet customer needs, and achieve fast speed and high etching precision. Effect
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[0010] The invention is described below by way of examples, but is not limited to the examples given.
[0011] (1) Electronic grade nitric acid is electrically heated and rectified, and the temperature is controlled at 110°C ± 10°C;
[0012] (2) the product obtained in step (1) is passed through a whitening reactor to remove nitrogen dioxide in the fraction with nitrogen, making it transparent and colorless;
[0013] (3) Put the product obtained in step (2) into a mixing tank, add an appropriate amount of ultrapure water, and stir for 30 minutes;
[0014] (4) the product obtained in step (3) is filtered through a filter of 0.2 μm to remove harmful particles with a particle diameter greater than 0.2 μm in the mixture to obtain this ultra-high-purity nitric acid;
[0015] The above-mentioned method for preparing ultra-high-purity nitric acid, wherein: the relative density of nitric acid in the step (1) is 1.40-1.42.
[0016] In the step (3), the concentration of nitric acid is...
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