Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-voltage additive for ZnO varistor and preparation method thereof

A technology for varistors and additives, which is applied in the field of additives and preparations for reducing the varistor voltage of ZnO varistors, and can solve problems such as reducing the nonlinear coefficient of varistors

Inactive Publication Date: 2014-11-19
LIAOCHENG UNIV
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in general, oxide additives that promote grain growth will reduce the nonlinear coefficient of varistors to varying degrees

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-voltage additive for ZnO varistor and preparation method thereof
  • Low-voltage additive for ZnO varistor and preparation method thereof
  • Low-voltage additive for ZnO varistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1: A ZnO varistor low voltage additive and its preparation method.

[0020] 1) Bi 2 o 3 and Cr 2 o 3 The ingredients were weighed at a molar ratio of 18:1, and absolute ethanol was used as a solvent, and ball milled for 30 min.

[0021] 2) After the powder is dried, grind it into the crucible, 750 o C calcined for 4 h.

[0022] 3) The powder obtained after calcination is pulverized, ball milled and dried, and then ground and passed through a 50-mesh sieve to obtain the additive.

[0023] 4) To ZnO-Bi 2 o 3 -MnO 2 0 wt%, 3 wt%, and 5 wt% of the additive were added to the initial powder of the system varistor ceramics. According to the traditional pressure-sensitive ceramic preparation method, after ball milling, drying, molding, sintering, and electrode application, the electrical performance parameters of the pressure-sensitive ceramic samples are shown in Table 1.

[0024] Table 1: The electrical performance of embodiment 1 sample

[0025]

[0...

Embodiment 2

[0027] Embodiment 2: A ZnO varistor low voltage additive and its preparation method.

[0028] 1) Bi 2 o 3 and Cr 2 o 3 The ingredients were weighed at a molar ratio of 18:1, and deionized water was used as a solvent, and ball milled for 1.2 h.

[0029] 2) After the powder is dried, press the powder into a sheet with a thickness less than 2 mm, 750 o C calcined for 3 h.

[0030] 3) The powder obtained after calcination is pulverized, ball milled and dried, and then ground and passed through a 100-mesh sieve to obtain the additive.

[0031] 4) To ZnO-Bi 2 o 3 -Co 2 o 3 0 wt%, 3 wt%, and 5 wt% of the additive were added to the initial powder of the varistor ceramics in the system. According to the traditional pressure-sensitive ceramic preparation method, after ball milling, drying, molding, sintering, and electrode application, the electrical performance parameters of the pressure-sensitive ceramic samples are shown in Table 2.

[0032] Table two: the electrical prope...

Embodiment 3

[0035] Embodiment 3: A ZnO varistor low voltage additive and its preparation method.

[0036] 1) Bi 2 o 3 and Cr 2 o3 The ingredients were weighed at a molar ratio of 18:1, and absolute ethanol was used as a solvent, and ball milled for 30 min.

[0037] 2) After the powder is dried, grind it into the crucible, 750 o C calcined for 4 h.

[0038] 3) The powder obtained after calcination is pulverized, ball milled and dried, and then ground and passed through a 50-mesh sieve to obtain the additive.

[0039] 4) To ZnO-Bi 2 o 3 -B 2 o 3 Add 0 wt%, 3 wt%, 4 wt%, 5 wt% of the additive to the initial powder of the varistor ceramics of the same system. According to the traditional pressure-sensitive ceramic preparation method, after ball milling, drying, molding, sintering, and electrode application, the electrical performance parameters of the pressure-sensitive ceramic samples are shown in Table 3.

[0040] Table three: the electrical property of embodiment 3 samples

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low-voltage additive for a ZnO varistor and a preparation method thereof. The low-voltage additive comprises the chemical elements of Bi, Cr and O and the phase structure components of Bi2O3, Bi7.38Cr0.62O(12+x) and Bi14CrO24 and is prepared by calcining mixed powder of the Bi2O3 and Cr2O3. The mole ratio of the Bi2O3 and the Cr2O3 which are included in initial raw materials is 18:1, the calcination temperature is 750 DEG C, and the heat preserving time is 2-4 hours. The doped quantity of the additive is regulated between 3 percent by weight and 5 percent by weight according to different formulas of a ZnO varistor base body in a using process. The low-voltage additive disclosed by the invention has simple preparation process and can promote the crystal grain growth, reduce the varistor voltage of the ZnO varistor and enhance the nonlinear coefficient of the ZnO varistor to a certain degree in a sintering process.

Description

technical field [0001] The invention relates to a pressure-sensitive material, in particular to an additive capable of reducing the varistor voltage of a ZnO varistor and a preparation method thereof. Background technique [0002] ZnO varistor is made of ZnO as the main raw material, adding a small amount of Bi 2 o 3 ,Co 2 o 3 , MnO 2 , Cr 2 o 3 and other oxides, which are sintered by traditional ceramic preparation technology. Due to its high nonlinear coefficient, fast response, low leakage current and low manufacturing cost, it has become one of the most widely used varistor materials. Among them, low-voltage varistors can be widely used in the protection of automobile industry, communication equipment, railway signals, micro-motors and various electronic devices. With the development of miniaturization and integration of electronic products, the demand for low-voltage varistors Bigger and bigger (Zhang Congchun, Zhou Dongxiang, etc., low-voltage ZnO varistor mate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/48
Inventor 徐志军马帅初瑞清李伟郝继功巩云云
Owner LIAOCHENG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products