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Lead wire frame copper plating method, lead wire frame, lead wire frame row

A lead frame and copper plating technology is applied in the field of lead frames, lead frames that are easier to manufacture and lead frame rows, which can solve the problems of high cost and complex structure, and achieve the effect of saving cost and being beneficial to miniaturization.

Active Publication Date: 2014-10-22
NINGBO KANGQIANG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing technology provides various solutions to solve this problem. For example, the Chinese patent application number CN201010152911.8 "Aluminum Alloy Lead Frame Applied in Power Semiconductor Components" uses aluminum alloy as the base material, and electroplating more layer electroplating layer, the structure of this scheme is too complicated
Another example is the Chinese patent "Aluminum Lead Frame for Semiconductor QFN / SON Devices" with the application number CN200780011289.5, in which zinc and nickel layers are plated on the part of the lead segment that is not covered by the packaging material, and the cost is relatively high

Method used

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  • Lead wire frame copper plating method, lead wire frame, lead wire frame row
  • Lead wire frame copper plating method, lead wire frame, lead wire frame row
  • Lead wire frame copper plating method, lead wire frame, lead wire frame row

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The lead frame aluminum alloy base is made of the following elements by weight percentage:

[0037] Magnesium: 0.4%, silicon: 0.02%, copper: 0.5%, manganese: 0.02%, chromium: 0.1%, zirconium: 0.05%, and the balance is aluminum and unavoidable impurities.

[0038] Silicon element can strengthen the corrosion resistance of aluminum alloy, improve yield strength and elasticity, but excessive silicon element will reduce the welding performance of alloy materials.

[0039] Manganese can promote grain growth and improve the rigidity of the alloy, but excessive manganese will reduce the corrosion resistance of the alloy.

[0040] Chromium can improve the strength, hardness and toughness of the alloy, so its content is high, but the combination of chromium and aluminum will reduce the resistance of the alloy, which is not conducive to the electrical conductivity of the lead frame.

[0041] The zirconium element improves the thermal stability of the alloy while reducing the bri...

Embodiment 2

[0058] The lead frame aluminum alloy base is made of the following elements by weight percentage:

[0059] Magnesium: 1.0%, silicon: 0.5%, copper: 0.2%, manganese: 0.04%, chromium: 0.3%, zirconium: 0.1%, and the balance is aluminum and unavoidable impurities.

[0060] Copper-plating the aluminum alloy lead frame substrate made according to the following steps:

[0061] Degreasing and degreasing, potion composition and content:

[0062] Sodium hydroxide: 38%, sodium metasilicate: 35%, degreasing agent: 40g / L, degrease and degrease at 50°C-70°C;

[0063] One-time zinc dipping: Put the degreased aluminum alloy substrate into a mixed solution with a concentration of zinc ions of 40g / L, a concentration of iron oxide of 65g / L, and a concentration of sodium hydroxide of 230g / L for zinc dipping, and the zinc dipping temperature is 57 °C; then wash with water at a temperature of 50 °C;

[0064] One-time pickling: put the aluminum alloy substrate after one-time zinc dipping into the ...

Embodiment 3

[0075] The lead frame aluminum alloy base is made of the following elements by weight percentage:

[0076] Magnesium: 1.5%, silicon: 0.8%, copper: 0.2%, manganese: 0.2%, chromium: 0.3%, zirconium: 0.25%, and the balance is aluminum and unavoidable impurities.

[0077] Copper-plating the aluminum alloy lead frame substrate made according to the following steps:

[0078] Degreasing and degreasing, potion composition and content:

[0079] Sodium hydroxide: 45%, sodium metasilicate: 40%, degreasing agent: 40g / L, degrease and degrease at 50°C-70°C;

[0080] One-time zinc dipping: Put the degreased aluminum alloy substrate into a mixed solution with a zinc ion concentration of 45g / L, an iron oxide concentration of 70g / L, and a sodium hydroxide concentration of 250g / L for zinc dipping, and the zinc dipping temperature is 60 °C; then wash with water at a temperature of 50 °C;

[0081] One-time pickling: put the aluminum alloy substrate after one-time galvanizing into a nitric acid ...

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Abstract

The invention belongs to the field of semiconductor manufacturing, and provides a lead wire frame and a lead wire frame row, for solving the problem about how to miniaturize a package structure. The lead wire frame comprises a chip carrier and multiple lead wires distributed at one side of the chip carrier. The multiple lead wires comprise chip lead wires and pin lead wires. The chip lead wires are connected with the chip carrier. The pin lead wires are broken from the chip carrier. The multiple lead wires are sheet-shaped and are disposed at the same plane. The chip carrier is sheet-shaped and is parallel with yet not coplaner with a plane where the lead wires are located. According to the invention, a lead wire plane and a chip carrier plane are not coplanar, such that a chip can be placed on one surface, which is closer to the lead wire plane, of the chip carrier. The thickness of the chip does not additionally increase the thickness of the chip after overall packaging, and the miniaturization of a chip package structure is facilitated.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing and relates to a lead frame, in particular to a lead frame and lead frame row which are easier to manufacture. Background technique [0002] Semiconductor packaging technology is already a very mature process. The lead frame is used as the chip carrier of the integrated circuit. It is a kind of bonding material (gold wire, aluminum wire, copper wire) to realize the internal circuit of the chip and the outer lead. Electrical connection is a key structural component that forms an electrical circuit. It acts as a bridge to connect external wires. Most of the semiconductor integrated blocks require the use of lead frames. [0003] At present, lead frames basically use copper-based alloys as the main material. However, with the rise of copper prices, the cost of lead frames has risen sharply, which has brought great pressure to enterprises. How to replace copper alloys with new materials ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/495
CPCH01L24/97H01L21/4821C25D3/38C25D5/44C25D7/00H01L23/49534H01L23/49582
Inventor 郑康定曹光伟冯小龙段华平马叶军
Owner NINGBO KANGQIANG ELECTRONICS CO LTD
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