Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching composition for copper-based metal layer and method of preparing metal line

A technology of composition and metal layer, applied in the field of etchant composition, can solve problems such as electrical short circuit wiring, copper metal layer etching, failure, etc., and achieve the effects of preventing electrical short circuit, preventing residue, and improving the cone angle profile

Inactive Publication Date: 2014-10-01
DONGWOO FINE CHEM CO LTD
View PDF6 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above patent has a problem that the upper copper metal layer and the lower indium oxide layer are etched, whereby electrical shorts or wiring failures may occur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching composition for copper-based metal layer and method of preparing metal line
  • Etching composition for copper-based metal layer and method of preparing metal line
  • Etching composition for copper-based metal layer and method of preparing metal line

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0124] 1-1. Example 1 to Example 5 and Comparative Example 1 to Comparative Example 4

[0125] According to the components listed in Table 1 below, etchant compositions were prepared in Examples 1 to 5 and Comparative Examples 1 to 4 (unit: weight percent relative to the total weight percent 100%).

[0126] [Table 1]

[0127]

experiment Embodiment 2

[0129] After depositing a metal oxide material (ITO) on a glass substrate (100mm x 100mm) and depositing a copper layer on top of the above layer, a photoresist with a desired pattern is formed on the substrate by photolithography. Then, an etching process was performed on the copper-based metal layer using each of the compositions prepared in Example 1 to Example 5 and Comparative Example 1 to Comparative Example 4, respectively.

[0130] An apparatus in injection etching mode (model name: ETCHER (TFT), SEMES Corporation) was used, and the etchant composition was kept at a temperature of about 30° C. during etching. However, the temperature may be appropriately changed according to other process conditions and other factors, if desired. Etching is typically performed for about 100 seconds, which time may vary depending on the etching temperature. The profile of the copper-based metal layer etched during the etching process was examined using a cross-sectional SEM (scanning e...

experiment Embodiment 3

[0174] After depositing a metal oxide material (ITO) on a glass substrate (100mm x 100mm) and depositing a copper layer on top of the above layer, a photoresist with a desired pattern is formed on the substrate by photolithography. Then, an etching process was performed on the copper-based metal layer using each of the compositions prepared in Example 12 to Example 17 and Comparative Example 11 to Comparative Example 16, respectively.

[0175] A device in injection etching mode (model name: ETCHER (TFT), SEMES Corporation) was used, and the etchant composition was kept at a temperature of about 30 °C during etching. However, the temperature may be appropriately changed according to other process conditions and other factors, if desired. Etching is typically performed for about 100 seconds, which time may vary depending on the etching temperature. The profile of the copper-based metal layer etched during the etching process was examined using a cross-sectional SEM (manufacture...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to an etching composition for a copper-based metal layer and a method for preparing a metal line. The invention discloses an etching agent composition for the copper-based metal layer. The etching agent composition can represent an excellent cone angle profile. Furthermore the invention discloses a method of forming a wiring through the etching agent composition. The etching agent composition for the copper-based metal layer comprises the components of: 0.5-20% by weight of persulfate, 0.1-5% by weight of a triazole compound and the balance of water. Therefore the copper-based metal layer is selectively etched. An excellent straightness of the etched pattern is realized. Furthermore an improved cone angle profile is represented.

Description

technical field [0001] The present invention relates to an etchant composition for a copper-based metal layer that can exhibit an excellent taper angle profile, and to a method of forming wiring using the etchant composition. Background technique [0002] For example, representative semiconductor devices provided with low-resistance wirings containing copper may include liquid crystal display (LCD) devices. [0003] The aforementioned LCD device is a light-weight thin-film type flat panel display (FPD) and can replace existing display devices such as cathode ray tubes (CRTs), the aforementioned LCD device utilizes the optical isotropic property of liquid crystals to express images, and can effectively Used in notebook or desktop computers with excellent resolution, color display and image quality. [0004] A liquid crystal display device generally has a color filter substrate, an array substrate, and a liquid crystal layer formed between the color filter substrate and the a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/14C23F1/02
CPCC23F1/02C23F1/18
Inventor 李恩远李铉奎权玟廷金镇成梁圭亨赵成培
Owner DONGWOO FINE CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com