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Preparation method and device of uniform and high-density nanoparticle film

A nano-particle and high-precision technology, applied in the field of preparation of uniform and high-density nano-particle films, can solve the problems of inability to obtain millimeter-scale products, and the film density needs to be improved, achieving controllable uniformity and controllable deposition rate. Effect

Active Publication Date: 2014-10-01
CENT IRON & STEEL RES INST
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Problems solved by technology

[0003] Chinese patent applications CN 101503792 B and CN 1804107 A disclose devices and techniques for physically synthesizing nanoparticles, but the nanoparticles are conventional deposition processes in the process of sputtering film formation, and the density of the obtained films needs to be improved
[0006] The above three methods can obtain a certain density of thin film materials, but cannot obtain millimeter-scale products, and in terms of size control, uniformity and deposition rate, innovations in preparation technology are still needed

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  • Preparation method and device of uniform and high-density nanoparticle film

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preparation example Construction

[0064] The principle of the preparation method and device of the uniform and high-density thin film of the present invention is to apply a voltage on the substrate to attract particles in the plasma nanoparticle beam generated by the gas-phase cluster beam source that are opposite to the electric field applied , so that it accelerates and hits the substrate to promote the dense accumulation of deposited particles; the sample stage is rotated by the motor drive, and the particles are deposited on the surface of the substrate uniformly at high speed to form a uniform and high-density film.

[0065] The preparation device of the uniform and high-density film of the present invention mainly includes a sputtering target gun 3, a substrate 15, a sample stage 16, a sputtering chamber 1, a transition chamber 10, a deposition chamber 25, a high voltage system 27, a cooling system, transition chamber vacuum system 28, deposition chamber vacuum system 31 and rotation system 26.

[0066] ...

Embodiment 1

[0083] The preparation method of the uniform, highly dense film of embodiment 1 may further comprise the steps:

[0084] 1) The polysilicon substrate 15 is ultrasonically cleaned with acetone, absolute ethanol, and deionized water, blown dry with a nitrogen gun, and then placed in an oven for drying. The cleaned substrate 15 is mounted on the sample stage 16, and simultaneously The target material (Fe 50 Ni 50 target);

[0085] 2) Turn on the transition chamber vacuum system 28 and the deposition chamber vacuum system 31 until the sputtering background vacuum in the deposition chamber 25 is higher than 5×10 -4 Pa;

[0086] 3) Turn on the cooling system of the sputtering chamber 1 and adjust the temperature of the cooling liquid 4 to 10°C;

[0087] 4) Pass into the Ar gas of 120 sccm in the sputtering chamber 1 through the inlet pipe 2;

[0088] 5) Adjust the transition chamber plate valve 8 so that the air pressure in the sputtering chamber 1 is 90Pa, the air pressure in ...

Embodiment 2

[0096] The preparation method of the uniform, highly dense film of embodiment 2, comprises the following steps:

[0097] 1) The polysilicon substrate is ultrasonically cleaned with acetone, absolute ethanol, and deionized water, blown dry with a nitrogen gun, and then placed in an oven for drying. Install the target material (Fe 50 Ni 50 target);

[0098] 2) Turn on the transition chamber vacuum system 28 and the deposition chamber vacuum system 31 until the sputtering background vacuum in the deposition chamber 25 is higher than 5×10 -4 Pa;

[0099] 3) Turn on the cooling system of the sputtering chamber 1 and adjust the temperature of the cooling liquid 4 to 10°C;

[0100] 4) Pass into the Ar gas of 120 sccm in the sputtering chamber 1 through the inlet pipe 2;

[0101] 5) Adjust the transition chamber plate valve 8 so that the air pressure in the sputtering chamber is 90Pa, the air pressure in the transition chamber is 2Pa, the air pressure in the deposition chamber is...

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Abstract

The invention relates to a preparation device and a method of a uniform and high-density nanoparticle film. The device comprises a sputtering target gun (3), a substrate (15), a sample table (16), a sputtering chamber (1), a transition chamber (10), a settling chamber (25), a high voltage system (27), a transition chamber vacuum system (28) and a settling chamber vacuum system (31). The device is characterized in that voltage is applied on a substrate to attract particles having opposite electrical property with an applied electric field in plasma nanoparticle beam generated by a gas phase cluster beam source so that the particles are accelerated to dash against the substrate to promote dense accumulation of sedimentary particles. The sample table is driven by a motor to rotate, and the particles are uniformly deposited on the surface of the substrate at a high speed to form the uniform and high-density nanoparticle film.

Description

technical field [0001] The invention belongs to the field of nanomaterial preparation, and in particular relates to a method and device for preparing a uniform and high-density nanoparticle film. Background technique [0002] Nanomaterials research is an important branch of the frontier of modern science. When the particle size of the material enters the nanometer level, the quantum size effect, small size effect, surface effect, interface effect and quantum tunneling effect embodied by it make the nanoparticles have many unique magnetic, optical and electrical properties, and are used in catalysis, light Absorption, medicine, magnetic media and new materials have broad application prospects, so the basic research on the application of nanoparticles is a hot topic in the above fields. Frontiers of disciplines at home and abroad have paid a lot of attention to the synthesis techniques, microstructure observation and comprehensive physical properties of nanoparticles. At pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32B82Y40/00
Inventor 夏振军何峻欧修龙安静赵栋梁强游
Owner CENT IRON & STEEL RES INST
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