Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member

A technology of power modules and manufacturing methods, which is applied in semiconductor/solid-state device components, manufacturing tools, electric solid-state devices, etc., can solve the problems of ceramic substrate cracking, Ag-Cu eutectic structure layer hardness, etc., and achieve the effect of suppressing cracking

Active Publication Date: 2014-09-24
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The Ag-Cu eutectic structure layer is very hard, so when the thermal cycle is loaded on the above-mentioned power module substrate, when the shear stress caused by the difference between the thermal expansion coefficients of the ceramic substrate and the copper plate acts, there will be Ag-Cu The eutectic structure layer is not deformed but the problem of cracks on the ceramic substrate

Method used

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  • Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member
  • Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member
  • Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0064] First, the first embodiment will be described. figure 1 In the figure, the power module substrate 50 with a heat sink and the power module 1 using the power module substrate 10 of this embodiment are shown.

[0065] This power module 1 includes a power module substrate 10 provided with a circuit layer 12 , a semiconductor element 3 (electronic component) bonded to the surface of the circuit layer 12 via a solder layer 2 , a buffer plate 41 , and a heat sink 51 . The solder layer 2 is, for example, Sn-Ag-based, Sn-In-based, or Sn-Ag-Cu-based solder. In this embodiment, a Ni plating layer (not shown) is provided between the circuit layer 12 and the solder layer 2 .

[0066] The power module substrate 10 includes a ceramic substrate 11, and is arranged on one surface of the ceramic substrate 11 ( figure 1 The circuit layer 12 in the middle is the upper surface), and the other surface of the ceramic substrate 11 ( figure 1 The middle is the metal layer 13 of the lower su...

no. 2 approach

[0137] Next, a second embodiment will be described. Figure 7 The middle table shows the power module substrate 110 of this embodiment. This power module substrate 110 includes a ceramic substrate 111, and is disposed on one surface of the ceramic substrate 111 ( Figure 7 The circuit layer 112 on the upper surface of the ceramic substrate 111 and the other surface of the ceramic substrate 111 ( Figure 7 The metal layer 113 in the lower surface).

[0138] The ceramic substrate 111 prevents electrical connection between the circuit layer 112 and the metal layer 113, and is made of highly insulating Si 3 N 4 (silicon nitride) composition. The thickness of the ceramic substrate 111 is preferably set within a range of 0.2 to 1.5 mm, and is set to 0.32 mm in the present embodiment.

[0139] Such as Figure 10 As shown, the circuit layer 112 is bonded to one side of the ceramic substrate 111 through a copper plate 122 ( Figure 10 The middle is the upper surface). The thick...

Embodiment

[0188] A comparative experiment performed to confirm the effectiveness of the present invention will be described. Various slurries were produced under the conditions shown in Table 1, Table 2, and Table 3. In Table 1, alloy powders were used as powder components. In Table 2, powders of respective elements (element powders) were used as powder components. In Table 3, powders of respective elements (element powders) were used as powder components, and hydride powders of nitride-forming elements were used as nitride-forming elements. In Table 3, in addition to the element powder mixing ratio of the hydride of the nitride-forming element, the content of the nitride-forming element (active metal content) is also described.

[0189] An anionic surfactant is used as a dispersant, dibutyl adipate is used as a plasticizer, and abietic acid is used as a reducing agent.

[0190] The mixing ratio of resin, solvent, dispersant, plasticizer, and reducing agent other than powder componen...

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Abstract

This substrate for power modules is obtained by laminating and bonding a copper plate, which is formed of copper or a copper alloy, onto the surface of a ceramic substrate (11). A nitride layer (31) is formed on the surface of the ceramic substrate (11) between the copper plate and the ceramic substrate (11). An Ag-Cu eutectic structure layer (32) having a thickness of 15 [mu]m or less is formed between the nitride layer and the copper plate.

Description

technical field [0001] The present invention relates to a substrate for a power module, a substrate for a power module with a heat sink, a method for manufacturing a power module, a substrate for a power module, and a paste for bonding copper parts, which are used in semiconductor devices that control large current and high voltage. material. [0002] This application is based on the patent application No. 2012-020171 filed in Japan on February 1, 2012, the patent application No. 2012-020172 filed in Japan on February 1, 2012, and the patent application 2012 filed in Japan on December 6, 2012 -267298 and Patent Application No. 2012-267299 filed in Japan on December 6, 2012 claim priority, and the contents thereof are incorporated herein by reference. Background technique [0003] Among semiconductor elements, a power module for supplying electric power has a relatively high calorific value. Therefore, as a substrate on which the power module is mounted, for example, a power...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/13B23K35/30B23K35/32C22C5/06C22C14/00C22C16/00C22C27/02C22C28/00H01L23/36
CPCC22C27/00B23K35/30C22C27/02H01L2224/32225H01L2924/01322C22C21/00C22C14/00C22C16/00C22F1/08C22C28/00H01L23/3735C22C5/06B23K35/32C04B2237/125C04B37/026C04B2237/121C04B2237/366C04B2237/368C04B2237/402C04B2237/407C04B2237/60C04B2237/706C04B2237/708C04B2237/72C04B35/632C04B37/025C04B2235/44C04B2237/08C04B2237/122C04B2237/124C04B2237/126C04B2237/127C04B2237/128C04B2237/704B23K1/0008Y10T428/12542B23K35/025B23K2101/42B23K35/3006B23K35/36B23K35/262B23K35/365C22C30/04H01L2924/00B23K1/0016H05K1/0271H05K1/0306H05K1/09H05K1/181H05K3/388H05K13/0465H05K2201/0175G01B15/02G01N23/203G01N2223/633H05K1/0203H05K1/18
Inventor 寺崎伸幸长友义幸西川仁人黑光祥郎
Owner MITSUBISHI MATERIALS CORP
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