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Method for preparing graphene by chemical vapor deposition

A chemical vapor deposition and graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of loss of electrical conductivity, low quality of graphene, difficult to restore graphite, etc., and achieve excellent electrical conductivity, high light transmittance, and high transparency Effect

Inactive Publication Date: 2014-09-10
SUZHOU SIDIKE NEW MATERIALS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The development time of this method is short, and many theoretical and technical problems still cannot be broken through at this stage, and further exploration is needed
The oxidation-reduction method is to oxidize graphite to obtain graphene oxide dispersed in the solution, and then reduce it with a reducing agent to prepare graphene; its cost is low and its yield is high, but it is difficult to completely reduce graphite completely oxidized by a strong oxidant, resulting in some of its physical properties. , chemical and other properties, especially the loss of electrical conductivity
The C-doped precipitation method is to use MBE to grow C-doped GaAs materials. GaAs is decomposed by increasing the temperature, and C atoms are precipitated to form graphene. This method has low controllability, and the quality of the generated graphene is relatively low. groping stage

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  • Method for preparing graphene by chemical vapor deposition

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Embodiment 1

[0024] Present embodiment provides a kind of chemical vapor deposition method to prepare graphene, is to make through the following steps:

[0025] 1) Purify the copper alloy substrate: ultrasonically clean the copper alloy in 15% hydrochloric acid solution, 50% acetone and 75% ethanol solution for 10 minutes in sequence, and dry at 80°C in a nitrogen environment;

[0026] 2) Place the copper alloy: place the copper alloy in parallel in the chemical vapor deposition (CVD) equipment, and evacuate the CVD equipment to within 1mTorr;

[0027] 3) Remove the oxide film on the surface of the copper alloy: raise the copper alloy to 980°C within 50 minutes, then inject hydrogen gas with a flow rate of 650 sccm from the bottom inlet of the CVD equipment, keep the pressure in the CVD equipment at 0.1-90 Torr, and remove the oxide film on the surface of the copper alloy. oxide film;

[0028] 4) Preparation of graphene: keep the pressure in the CVD equipment at 0.1 to 90 Torr, and the te...

Embodiment 2

[0032] Present embodiment provides a kind of chemical vapor deposition method to prepare graphene, is to make through the following steps:

[0033] 1) Purify the copper alloy substrate: ultrasonically clean the copper alloy in 10% hydrochloric acid solution, 60% acetone and 65% ethanol solution for 10 minutes in sequence, and dry at 75° C. under nitrogen atmosphere;

[0034]2) Place the copper alloy: place the copper alloy in parallel in the chemical vapor deposition (CVD) equipment, and evacuate the CVD equipment to within 1mTorr;

[0035] 3) Remove the oxide film on the surface of the copper alloy: raise the copper alloy to 980°C within 50 minutes, then inject hydrogen gas with a flow rate of 650 sccm from the bottom inlet of the CVD equipment, keep the pressure in the CVD equipment at 0.1-90 Torr, and remove the oxide film on the surface of the copper alloy. oxide film;

[0036] 4) Preparation of graphene: keep the pressure in the CVD equipment at 0.1 to 90 Torr, and the t...

Embodiment 3

[0040] Present embodiment provides a kind of chemical vapor deposition method to prepare graphene, is to make through the following steps:

[0041] 1) Purify the copper alloy substrate: ultrasonically clean the copper alloy in 18% hydrochloric acid solution, 50% acetone and 65% ethanol solution for 10 minutes in sequence, and dry at 80° C. in a nitrogen environment;

[0042] 2) Place the copper alloy: place the copper alloy in parallel in the chemical vapor deposition (CVD) equipment, and evacuate the CVD equipment to within 1mTorr;

[0043] 3) Remove the oxide film on the surface of the copper alloy: raise the copper alloy to 980°C within 55 minutes, then inject hydrogen gas with a flow rate of 700 sccm from the bottom inlet of the CVD equipment, keep the pressure in the CVD equipment at 0.1-90 Torr, and remove the oxide film on the surface of the copper alloy. oxide film;

[0044] 4) Preparation of graphene: keep the pressure in the CVD equipment at 0.1 to 90 Torr, and the ...

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Abstract

The invention discloses a method for preparing graphene by chemical vapor deposition. The method comprises the steps of firstly, purifying a copper alloy substrate; secondly, placing a copper alloy in a chemical vapor deposition (CVD) device; thirdly, removing an oxide film on the surface of the copper alloy; fourthly, preparing graphene: maintaining the pressure within the CVD device to be 0.1-90Torr and the temperature of the copper alloy substrate to be 800-980 DEG C, then introducing hydrogen and methane gas, wherein the flow ratio of hydrogen to methane gas is (1:1) to (1:10) and continuously introducing hydrogen and methane gas for 50-70 minutes; fifthly, obtaining a graphene product; and sixthly, purifying the graphene product to obtain graphene. The preparation method disclosed by the invention is simple in preparation process and low in cost and is suitable for large-scale production and large-area graphene products with high transmittance, high quality and high purity can be produced by the method.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing graphene by chemical vapor deposition. Background technique [0002] Graphene, the monoatomic layer of graphite, is a two-dimensional structure in which carbon atoms are arranged in a honeycomb shape, and is also the basic unit of other low-dimensional carbon materials such as fullerenes and carbon nanotubes. According to the number of layers, graphene can be divided into single-layer graphene, double-layer graphene, and few-layer graphene. Graphene has been studied for a long time, but the truly independent and stable graphene was obtained by Geim et al. from the University of Manchester in the United Kingdom by stripping highly oriented graphite through adhesive tape. Since the discovery of graphene, due to its excellent performance and huge application prospects, it has triggered a research boom in the fields of physics and material science. However, ...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/186
Inventor 金闯杨晓明
Owner SUZHOU SIDIKE NEW MATERIALS SCI & TECH
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