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A Broadband Low Offset Active Balun Circuit

A circuit and broadband technology, applied in the field of active Balun circuits, can solve the problems of signal gain loss, large occupied area, difficult differential signal, small amplitude offset and phase offset, etc., to achieve small amplitude offset, small amplitude offset and phase offset, The effect of small phase misalignment

Inactive Publication Date: 2017-02-01
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the radio frequency microwave Balun circuit, if the passive Marchand Balun circuit is used, not only will there be a loss of signal gain, but it will also occupy a large area; and if the traditional capacitive cross-coupling (CCC: Capacitor Cross Coupled) mode active Balun circuit is used , although the circuit occupies a small area, due to the influence of parasitic capacitance effects, it is difficult for the differential signal generated by it to achieve a small amplitude offset and phase offset within a wide frequency range at the same time due to the effect of parasitic capacitance
Therefore, it becomes a big design challenge to realize an active balun circuit with high frequency, wide bandwidth, low phase offset and amplitude offset

Method used

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  • A Broadband Low Offset Active Balun Circuit
  • A Broadband Low Offset Active Balun Circuit
  • A Broadband Low Offset Active Balun Circuit

Examples

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Embodiment Construction

[0038] Take the design of an active Balun circuit with low amplitude offset and phase offset and wide frequency band input frequency between 24.25GHz and 26.65GHz as an example.

[0039] design circuit as figure 1 shown. The TSMC 0.13μm RF CMOS 1P8M process is adopted, the simulation tool is CadenceSpectreRF, and the power supply voltage is 1.2V. Where Vgg=Vgg1=620mV.

[0040] The MOS tubes are all radio frequency NMOS tubes, the resistors are high resistance polysilicon resistors, the capacitors are MIM capacitors, and the eighth layer of metal wiring.

[0041] When the input signal size is -40dBm signal, the amplitude offset of the active Balun in the wide frequency range of 24.25GHz~26.65GHz under layout PSS simulation is less than 0.16dB, and the phase offset is less than 0.9°; the static DC power consumption of the circuit is 2.8mW . The relationship between the differential signal amplitude offset and frequency can be obtained as Figure 4 As shown, while the relati...

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PUM

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Abstract

The invention belongs to the technical field of integrated circuits, and particularly relates to an active Balun circuit applied to broadband low detuning. The active Balun circuit is composed of a common-source amplifier and a source follower. The common-source amplifier is composed of a transistor M1, a resistor Rp and a resistor Rd, inputs a signal VIN to be coupled to a grid electrode of the common-source amplifier through a capacitor Cc, and outputs an inversion signal VOUT minus; the source follower is composed of a transistor M2, a transistor M3, a resistor Rp1 and a capacitor Cf, the signal VIN is inputted to the source follower, and the in-phase signal VOUT plus is outputted; in this way, the basic active Balun circuit is obtained. According to the active Balun circuit of the structure, the capacitor Cf is introduced to the source follower to serve as a freedom degree factor for adjusting phase balance and is matched with the resistor Rd, for adjusting amplitude balance, in the common-source amplifier, and therefore small phase detuning and amplitude detuning can be simultaneously achieved for the active Balun circuit within the wide frequency band range. The active Balun circuit can be obtained through the CMOS process, the BiMOS process and the like.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and specifically relates to an active Balun circuit applied to broadband, low amplitude offset and phase offset, which can be used in analog integrated circuits requiring low offset single-ended input and differential output, such as the front end of a radio frequency microwave receiver. . Background technique [0002] With the development of communication and semiconductor technology, all kinds of mobile communication and wireless data transmission are developing rapidly. At the same time, people's requirements for high speed and large bandwidth of wireless communication technology are becoming stronger and stronger, which prompts people to continuously develop and utilize higher frequency Wireless communication technology with resources and research on UHF. At the same time, wireless communication integrated circuits are developing towards a highly integrated system-on-a-chip. Ther...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/20H03F1/42H03F3/50
Inventor 李巍昌浩
Owner FUDAN UNIV
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