A kind of cold and hot alternate chemical bath method prepares the method for cdse thin film

Abstract

The invention discloses a method for preparing a CdSe film by adopting a cold-heat alternating chemical bath method. The method comprises the following steps of: (1) placing 20 mL of Cd(NO3) with the concentration of 0.03-0.10 mol / L into an ice-water bath as a cold solution A; (2) mixing 10 mL of KBH4 with the concentration of 0.42-0.6 mol / L and 10 mL of Na2SeO3 with the concentration of 0.06 mol / L, heating to 70-80 DEG C, reacting a solution to a red-brown color, and fast turning into an achromatic color within 4-8 seconds as a heat solution B; (3) vertically immersing a clean ITO (Indium Tin Oxid) conductive glass into the cold solution A obtained from the step (1), taking out after 5-60 seconds, fast immersing into the heat solution B obtained from the step (2), and also sustaining for 5-60 seconds; (4) repeating the step (3) for 4-20 times to generate the CdSe film in the red brown color on an ITO surface. The method disclosed by the invention is short in preparation time, can be used for controlling the thickness of the CdSe film by changing the cycle times of a cold-heat alternating chemical bath without using a toxic organic solvent and has the characteristic of firmly absorbing the CdSe film on ITO.

Description

technical field [0001] The invention relates to a method for preparing a CdSe thin film by a cold and hot alternate chemical bath method. Background technique [0002] Solar cells are mainly classified by materials into silicon solar cells, inorganic compound solar cells, dye-sensitized solar cells, etc. Silicon solar cells are constrained by the disadvantages of high pollution and high energy consumption in the preparation of silicon materials, so the preparation of low-pollution, low-energy The solar materials with good photoelectric performance and low power consumption are the focus of research by researchers from all over the world. Cadmium selenide (CdSe) is an n-type semiconductor material with a direct energy gap, belonging to the II-VI group semiconductor material, and its band gap is about 1.8eV. It is a semiconductor material with relatively stable chemical properties and has unique optical properties. The photoelectric conversion characteristics and obvious nonl...

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Problems solved by technology

Among them, although the electrodeposition method has relatively simple production equipment and low requirements for reaction conditions, it is not easy to control the shape of the crystal; the molecular beam epitaxy method is more complicated and is not conducive to large-scale production; and the hydrothermal method needs to be carried out in a sealed environment. , the shape of the product is not easy to control; most of the solvents used in the sol-gel method are organic solvents, which pollute the environment; the products generated by the chemical bath deposition method during the preparation process cannot be well adsorbed on the surface of the substrate

There is no report on the preparation of CdSe thin films by cold and hot alternate chemical bath deposition