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Method for preparing AZO film

A film and equipment technology, applied in the field of AZO film preparation, can solve the problems of high production cost, difficult to popularize and use in a wide range, and achieve the effect of reducing development and production costs and improving optical performance.

Inactive Publication Date: 2014-07-02
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the existing technology, doping is usually used to adjust the optical band gap of the film before coating to improve the optical properties of the film. Different targets need to be prepared according to the doping process, but the production cost is high, and it is difficult to popularize and use it on a large scale.

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  • Method for preparing AZO film
  • Method for preparing AZO film

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Experimental program
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Embodiment

[0017] The preparation method of AZO thin film in the present embodiment is as follows:

[0018] Step 1, magnetron sputtering: In the FJL-560 magnetron sputtering system, the vacuum degree of the vacuum chamber is controlled at 5×10 -4 Above Pa, the quartz substrate after ultrasonic cleaning is fixed on the substrate fixture, and doped with 2wt.% Al 2 o 3 The ZnO ceramic target is used as the cathode sputtering target, and the movable baffle is placed between the substrate fixture and the cathode sputtering target. The working gas used for bombarding the cathode sputtering target is argon with a purity of 99.99% and a pressure of 10 -2 ~10 -1 Pa.

[0019] At 350°C, turn on the DC power supply for ignition, make the argon gas bombard the cathode sputtering target, perform pre-sputtering for 10 minutes, and clean the surface of the target.

[0020] Set the rotation rate of the substrate fixture to 4r / min, turn on the rotation of the substrate fixture, remove the movable baff...

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Abstract

The invention provides a method for preparing an AZO film. The method is characterized by comprising the following steps: (1) carrying out magnetron sputtering: in direct-current magnetron sputtering equipment, by adopting an Al2O3 doped ZnO ceramic target as a cathode sputtering target and adopting argon gas as working gas, enabling argon gas to bombard the cathode sputtering target at the working gas pressure of 10<-2> to 10<-1>Pa, carrying out pre-sputtering for 8-10 minutes, taking a quartz substrate as an anode after the process of pre-sputtering is ended, enabling the quartz substrate to automatically rotate at the rate of 3-6r / min, enabling argon gas to bombard the cathode sputtering target, and carrying out magnetron sputtering for 8 minutes, so as to deposit an AZO film on the quartz substrate; (2) etching a grating microstructure: coating the surface of the AZO film with a layer of photoresist, covering the surface of the photoresist with a grating mask plate, exposing the photoresist, developing the photoresist with a developing solution, and forming grating grooves in the surface of the AZO film through etching by adopting an argon ion beam etching technology.

Description

technical field [0001] The present invention relates to the preparation of AZO thin films, in particular to a preparation method of AZO thin films with tunable optical bandgap, Background technique [0002] In recent years, ZnO transparent conductive films have been extensively studied. ZnO thin films compared to ITO and SnO 2 However, it has the advantages of cheap price, relatively low deposition temperature and better stability in hydrogen atmosphere. As an important optoelectronic information material, the excellent photoelectric properties of aluminum-doped zinc oxide (AZO) transparent conductive film make it widely used in solar cells, liquid crystal displays, thermal mirrors and other fields. [0003] At present, there are many methods for preparing AZO thin films, including sol-gel method, chemical vapor deposition method, electron beam evaporation method, pulsed laser method and magnetron sputtering method. With the wide application of AZO, optimizing the optical...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08C23C14/04
Inventor 脱文刚洪瑞金丁亮亮唐庆勇张大伟陶春先
Owner UNIV OF SHANGHAI FOR SCI & TECH
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