Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for making silica film on surface of quartz substrate

A technology of silicon dioxide film and quartz substrate, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of inability to prepare, poor controllability of sputtering method, slow rate of thermal oxidation method, etc. Achieve the effects of avoiding precipitation and improving film production efficiency and quality

Inactive Publication Date: 2014-06-25
SHANGHAI XINDIANTONG COMM CONSTR SERVICE +2
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods used for the preparation of silicon dioxide films mainly include chemical vapor deposition, thermal oxidation, sputtering and sol-gel methods, etc. Among them, the film quality of chemical vapor deposition is relatively dense, the film is thinner, and the stress is larger. , multiple annealing is required; the thermal oxidation method is too slow and cannot be prepared on a quartz substrate; the sputtering method has poor controllability and poor film quality; the sol-gel method is cumbersome to operate, and the adjustable range of the refractive index is small. easy to crack

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for making silica film on surface of quartz substrate
  • Method for making silica film on surface of quartz substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The method for preparing silicon dioxide film on the surface of quartz substrate of the present invention comprises the following steps:

[0019] Step 1. Place the quartz substrate on a rotating and temperature-controlled stage, and use a hydrogen-oxygen flame at a high temperature of 2500-3000 ° C to generate a lower cladding on the surface of the quartz substrate through a hydrolysis reaction. SiCl 4 、H 2 , O 2 gas, the ventilation volume is SiCl respectively 4 8-15sccm, H 2 25-35 sccm, O 2 12-20sccm, control stage temperature 450-500℃, growth rate 5-6um / m, lower cladding growth thickness 15-20um;

[0020] Step 2. After the growth of the lower cladding layer is completed, put the sample into the vacuum rapid annealing furnace. The heating rate of the annealing furnace is 40-50°C / s. / s rises to 1380-1430°C, keeps for 4-5 hours, then cools down to 25°C at 40-50°C / s, takes out the sample, washes the surface of the lower cladding with acetone, ethanol, and wate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for making a silica film on the surface of a quartz substrate. The method comprises the following steps: placing the quartz substrate on an objective table, carrying out an oxyhydrogen-flame high-temperature hydrolysis reaction to allow a lower cladding, a core layer and an upper cladding to respectively sequentially grow on the surface of the quartz substrate, selectively introducing SiCl4, H2, O2, GeCl4, BCl3 and POCl3 gases by an oxyhydrogen lance during the growth of each of the above layers, controlling the introduction amount of each of the above gases, the temperature of the objective table and the growth speed of each of the layers to obtain different thicknesses of the lower cladding, the core layer and the upper cladding, and respectively annealing the layers in a vacuum rapid annealing furnace under a controlled heating and cooling speed and controlled heat insulation time to obtain the silica film on the surface of the quartz substrate. The method overcomes the defects of traditional making methods, realizes the adjustability of the refractive index of the silica film, avoids the precipitation of silica crystals in the annealing process, and improves the film making efficiency and the film quality.

Description

technical field [0001] The invention relates to a method for preparing a silicon dioxide film on the surface of a quartz substrate. Background technique [0002] Silicon dioxide film has high hardness, good wear resistance, good heat insulation, high light transmittance, strong corrosion resistance and good dielectric properties, and has been widely used in many fields, such as electronic integrated devices, thin film materials , Optical communication devices, etc. In optical communication devices, it is mainly used as a planar optical waveguide material. [0003] Planar optical waveguide technology is a new type of integrated optical technology that has emerged in the last ten years. It has the characteristics of simple design, compatibility with existing integrated circuit technology, high integration, and large output. It has been widely used in passive optical devices. Such as arrayed waveguide gratings, optical splitters, star couplers, etc. There are also many mater...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/56C23C16/40
Inventor 顾皛叶剑锋沈伟星陆志英陈子勇陈益新李雪峰管玉成张淼周林杰张效衡李新碗陈建平
Owner SHANGHAI XINDIANTONG COMM CONSTR SERVICE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products