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Metallization method for back contact solar battery

A solar cell and back contact technology, applied in the field of solar cells, can solve the problems of limiting the advantages of back contact cells, increasing the cost of non-silicon processing of cells, and affecting the connection of components, so as to facilitate automatic welding of components, reduce non-silicon processing costs, and increase The effect of large welding area

Active Publication Date: 2014-06-18
CSI CELLS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the traditional process, these pads usually use Ag paste. As a result, on the one hand, the non-silicon processing cost of the battery is increased, and on the other hand, it affects the connection of the components, which limits the advantages of the back contact battery.

Method used

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  • Metallization method for back contact solar battery
  • Metallization method for back contact solar battery
  • Metallization method for back contact solar battery

Examples

Experimental program
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Embodiment 1

[0048] see Figure 1~4 Shown, a kind of MWT solar cell metallization manufacturing method comprises the steps:

[0049] (1) Clean the original silicon wafer, remove the damaged layer, and then form a suede surface;

[0050] (2) Put the above-mentioned silicon wafer into a diffusion furnace for phosphorus diffusion, and the front side of the silicon wafer is the diffusion surface;

[0051] (3) Remove the back parasitic junction and peripheral junction by chemical etching on the diffused silicon wafer;

[0052] (4) Deposit the SiNx layer on the front side of the silicon wafer;

[0053] (5) forming a series of symmetrically distributed small holes on the silicon wafer by laser; forming 3 rows and 3 columns in total;

[0054] (6) Print Ag metal dots at the hole position on the back of the silicon wafer to realize the contact between the metal dots and the semiconductor; obtain N-type metal contact 1;

[0055]The N-type metal contact is a circular point contact with a diameter o...

Embodiment 2

[0077] see Figure 5~9 Shown, a kind of IBC solar cell metallization manufacturing method comprises the steps:

[0078] (1) Forming N on the back side of the silicon wafer + Zone 5 and P + launch zone 6;

[0079] (2) Deposit Al on the back of the above silicon wafer 2 o 3 / SiN x laminated passivation layer;

[0080] (3) Deposit SiN on the front side of the silicon wafer x layer;

[0081] (4) On silicon wafer P + The emission area 6 is windowed by laser, and the windowed area accounts for P + 6% of the emission area;

[0082] (5) On wafer P + The Al paste 7 is screen-printed in the emission area, and the Al paste completely covers the area of ​​the laser window;

[0083] (6) On the back of the wafer N + Print Ag paste 8 at the position of the area to realize the contact between the metal point and the semiconductor, and obtain the N-type metal contact;

[0084] The N-type metal contact is a circular point contact with a diameter of 0.5 mm;

[0085] (7) drying and...

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Abstract

The invention discloses a metallization method for a back contact solar battery. The metallization method for the back contact solar battery includes the following steps that firstly, a through hole electrode is manufactured, at least one N type metal contact column is formed, and the diameter of the N type metal contact is 0.5-1 mm; secondly, a metal layer is arranged in a P type doping area or a P+ doping area of the back face of a semiconductor substrate; thirdly, the position, opposite to the N type meal contact column, on the metal layer of the back face is provided with bar-shaped insulating medium layers; fourthly, second metal layers are arranged on all the insulating medium layers, and the second metal layers are electrically connected with N type metal contacts below the second metal layers, and a welding electrode is formed. The invention discloses a metallization preparing method of the back contact solar battery, the insulating medium layers and the second metal layers are led in, the maximum efficiency is achieved, electric leakage caused by contact between metal and a semiconductor is reduced, and meanwhile consumption of Ag metal slurry is reduced. The battery efficiency obtained before and after with the method is promoted by 0.4 percent, and an unexpected effect is obtained.

Description

technical field [0001] The invention relates to a metallization method for a back-contact solar cell, belonging to the field of solar cells. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. At present, the most common structure of solar cells is to place the positive and negative electrodes of the photovoltaic cell on the light-receiving surface and the backlight surface respectively, and realize the positive and negative interconnection through low-resistance metals. part of the current. [0003] With the development of solar power generation technology,...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/02245H01L31/022458H01L31/0682Y02E10/50Y02P70/50
Inventor 龙维绪吴坚王栩生章灵军
Owner CSI CELLS CO LTD
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