A kind of preparation method of phosphorus-doped zinc oxide thin film

Abstract

The present invention discloses a phosphorus-doped zinc oxide film preparation method, and belongs to the technical field of zinc oxide film preparation. The method comprises that: zinc source-containing gas and oxygen source-containing gas are introduced into an atomic layer deposition device, a zinc oxide film grows on the surface of a silicon substrate in the reaction chamber of the atomic layer deposition device, phosphorus source-containing gas and oxygen source-containing gas are introduced into the atomic layer deposition device, and phosphorus-oxygen bond grow on the zinc oxide film surface. According to the present invention, doping of phosphorus atoms in the zinc oxide film can be easily achieved, and the prepared film has characteristics of controllable doping layer, high uniformity and complete performance.

Description

technical field [0001] The invention relates to the technical field of zinc oxide film preparation, in particular to a preparation method of phosphorus-doped zinc oxide film. Background technique [0002] With the development of semiconductor technology, zinc oxide (ZnO), as the third-generation semiconductor material, has attracted widespread attention. ZnO has a hexagonal wurtzite crystal structure. Compared with gallium nitride, which has received wide attention in recent years, it has the characteristics of large band gap, high electron drift saturation speed, and small dielectric constant. Applications such as light-emitting devices and photodetection devices have more advantages. The PN junction is the core of semiconductor devices. The preparation of ZnO-based PN junctions requires both P-type and N-type thin film materials. High-quality N-type zinc oxide is easy to grow, but intrinsic ZnO is N-type due to the presence of donor defects. The corresponding P-type dopi...

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Problems solved by technology

[0004] In order to solve the existing problems such as complex preparation process of phosphorus-doped zinc oxide film, high preparation conditions, and small number of zinc vacancies occupied by phosphorus atoms, the present invention provides a preparation method of phosphorus-doped zinc oxide film, the method comprising: The layer deposition equipment feeds a zinc-containing source gas and a first oxygen-containing source gas, and grows a zinc oxide film on the surface of the silicon substrate in the reaction chamber of the atomic layer deposition equipment; the surface of the silicon substrate is pre-cleaned by RCA standard Cleaning is performed to form silanol bonds on the surface of the silicon substrate; the atomic layer deposition equipment feeds a phosphorus-containing source gas and a second oxygen-containing source gas to grow phosphorus-oxygen bonds on the surface of the zinc oxide film

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