Diode Lasers Mounted with Integral Diffusion Barriers

A technology of lasers and semiconductors, applied in the direction of semiconductor lasers, semiconductor devices, lasers, etc., can solve the problems of trace gas analyte identification and quantification critical errors, and achieve good solder joint continuity and good surface wetting effects

Active Publication Date: 2017-07-25
ENDRESS + HAUSER OPTICAL ANALYSIS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, drift or other changes in the output intensity of the laser source over time, especially in gases with background compounds that have one or more absorption spectra that may interfere with the absorption signature of the target analyte, can introduce trace gases Critical errors for identification and quantification of analytes

Method used

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  • Diode Lasers Mounted with Integral Diffusion Barriers
  • Diode Lasers Mounted with Integral Diffusion Barriers
  • Diode Lasers Mounted with Integral Diffusion Barriers

Examples

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Embodiment Construction

[0032] Experimental data show that in a laser absorption spectrometer utilizing a scannable or tunable laser source, a change in laser emission wavelength as small as 1 picometer (pm) or less between spectral scans, in its initial calibrated state, can significantly change the Determination of trace gas concentrations with respect to measurements obtainable with spectrum analyzers. An example of spectral laser spectroscopy using difference spectroscopy is described in commonly owned US Patent No. 7,704,301, the disclosure of which is incorporated herein in its entirety. Other experimental data indicate that the detection and quantification of analytes designed for low concentrations (such as hydrogen sulfide (H 2 S) on the order of parts per million (ppm)) and tunable diode laser-based analyzers employing harmonic (e.g. 2f) wavelength-modulated spectral subtraction, due to constant injection current and constant temperature (e.g., A laser output shift as small as 20 picometer...

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Abstract

The first contact (310) surface of the semiconductor laser chip (302) is formed to have a surface roughness selected to have a maximum peak-to-valley height that is substantially less than the thickness of the diffusion barrier layer. A diffusion barrier layer comprising a non-metallic conductive compound and having the thickness of the barrier layer may be applied to the first contact surface, and the solder composition (306) along the The first contact surface solders the semiconductor laser chip to the carrier mount (304), at the threshold temperature, dissolution of the barrier layer into the solder composition occurs. The diffusion barrier thus remains continuous. The non-metal conductive compound includes at least one of titanium nitride, titanium oxynitride, tungsten nitride, cerium oxide and cerium gadolinium oxynitride.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Patent Application Serial No. 13 / 212,085, filed August 17, 2011, entitled "Semiconductor Laser Mounting With Intact Diffusion Barrier Layer," which is incorporated herein by reference in its entirety. This application is also related to commonly published and commonly owned U.S. Patent Application No. 13 / 026,921, filed February 14, 2011, entitled "Spectrometer with Validation Cell," and to commonly filed February 14, 2011 and entitled "Validation and Correction of Spectrometer Performance Using a Validation Cell.” co-published and commonly-owned U.S. Patent Application No. 13 / 027,000. The disclosure of each application identified in this paragraph is hereby incorporated by reference in its entirety. technical field [0003] The subject matter described herein relates to the frequency stabilization of a semiconductor laser and, in particular, to a mounting technique for such a laser...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/022H01S5/042H01L23/485
CPCH01S5/02212H01L2224/0383H01L24/03H01L24/05H01L24/29H01L24/32H01L24/83H01L2224/04026H01L2224/05573H01L2224/05624H01L2224/05664H01L2224/05666H01L2224/05669H01L2224/0567H01L2224/0568H01L2224/05681H01L2224/05684H01L2224/05686H01L2224/29109H01L2224/29111H01L2224/29139H01L2224/29144H01L2224/83801H01L2224/05663H01L2224/32245H01L2924/15747H01L2924/12042H01S5/0237H01S5/02345H01L2924/04941H01L2924/01022H01L2924/053H01L2924/049H01L2924/00014H01L2924/01032H01L2924/01014H01L2924/014H01L2924/0105H01L2924/01029H01L2924/01082H01L2924/00G01N21/39G01N2021/399H01S5/068
Inventor 马蒂亚斯·施里姆佩尔阿尔弗雷德·菲提施加比·纽鲍尔
Owner ENDRESS + HAUSER OPTICAL ANALYSIS INC
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