Device and method for judging crown degree of substrate of power semiconductor module

Abstract

The invention discloses a device and a method for judging the camber of a power semiconductor module base plate. The device comprises a measuring module, a processing module and a display module, wherein the measuring module carries out point taking operation on the surface of the power semiconductor module base plate, more than three measuring points are measured and taken on the surface of the power semiconductor module base plate, and in addition, space position data of the measuring points is transmitted to the processing module; the processing module carries out calculation and processing according to the space position data of the measuring points to obtain the space position data of a reference surface, further obtains and outputs difference value data of the space position data of the surface and the reference surface of the power semiconductor module base plate to the display module, outputs the planeness data, calculates the highest point position data of the base plate, and judges whether the data is qualified or not; the display module receives the difference value data transmitted by the processing module and generates diagrams, judges whether the diagrams are qualified or not, judges results by combining the data of the processing module, and outputs the final results. The device and the method have the advantages that the requirement of judgment on the outline of the power semiconductor module base plate can be met, and the concave surface, the convex surface and the planeness of the base plate can be fast and simply judged.

Description

technical field [0001] The present invention relates to the field of semiconductor device manufacturing, in particular to a device and method for judging the crown of a power semiconductor, especially an IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module substrate. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device that is widely used in the field of power electronics. It is a composite of BJT (Bipolar Transistor) and MOSFET (Insulated Gate Field Effect Transistor). Fully controlled voltage-driven power electronic devices have both the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR. Among them, the saturation voltage drop of GTR is low, and the current carrying density is high, but the driving current is also large. The driving power of MOSFET is very small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying de...

AI Technical Summary

Problems solved by technology

However, it is difficult to judge the contour of the surface after being assembled into a product from the appearance. Although the existing technology can use a marble plane to make a simple judgment on this surface, it cannot finally confirm the contour of the entire surface

At the same time, although the marble plane can confirm whether it is concave or convex, it cannot meet the measurement speed requirements of mass testing while obtaining accurate judgments, and is only suitable for experimental testing.

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