A self-biased heterogeneous microwave ferromagnetic thin film material and its preparation method
A ferromagnetic thin film and heterogeneous technology, which is applied in the field of self-biased heterogeneous microwave ferromagnetic thin film materials and its preparation, can solve the problems of uneven film thickness and affecting the use of the film, so as to overcome the uneven thickness and operation The effect of convenience and simple preparation method
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Embodiment 1
[0010] Embodiment 1: (Fe 70 co 30 )x -B y Heterogeneous Ferromagnetic Thin Film Materials
[0011] In this example, Fe 70 co 30 It is a ferromagnetic parent material target, B is used as a doping element target, and a single crystal Si substrate with a length of 5 cm x 1 cm is used as a substrate. The length direction of the substrate is along the radial direction of the circular sample turntable. The single crystal Si substrate facing Fe 70 co 30 target, so that from Fe 70 co 30 The Fe and Co elements of the target are evenly distributed on the substrate; the distance between the target position of the B target and the end of the substrate center is 5-10cm and adjustable, so that the concentration of the B element from the B target is on the substrate from the center of the sample turntable to The edge gradually increases; adjusting the distance L of the B target position away from the sample center can adjust the B element distribution concentration range on the Si s...
Embodiment 2
[0012] Embodiment 2: (Fe 70 co 30 ) x -Hf y Heterogeneous Ferromagnetic Thin Film Materials
[0013] In this example, Fe 70 co 30 is the ferromagnetic parent material target, Hf is used as the doping element target, and the ferromagnetic parent material target Fe 70 co 30 and the sputtering power of the doped Hf target were set to 80 and 16W respectively, and the sputtering time was 30 minutes, and all the other conditions were the same as in Example 1 to obtain (Fe 70 co 30 ) x -Hf y A heterogeneous ferromagnetic thin film material, the hard axis of the heterogeneous thin film material is along the length direction of the substrate, the magnetic anisotropy field is as high as 360Oe, and the self-biased ferromagnetic resonance frequency is 5.2GHz.
Embodiment 3
[0014] Embodiment 3: (Fe 50 co 50 ) x -(Al 2 o 3 ) y Heterogeneous Ferromagnetic Thin Film Materials
[0015] In this example, Fe 50 co 50 is the ferromagnetic parent material target, with Al 2 o 3 For the doping element target, the ferromagnetic parent material target Fe 50 co 50 and doped Al 2 o 3 The sputtering power of the target is set to 80 and 120W respectively, and the sputtering time is 30 minutes, and all the other conditions are identical with embodiment 1, can obtain (Fe 50 co 50 ) x -(Al 2 o 3 ) y Heterogeneous ferromagnetic thin film material. The hard axis of the heterogeneous thin film material is along the length direction of the substrate, the magnetic anisotropy field is as high as 350Oe, and the self-biased ferromagnetic resonance frequency is 5.1GHz.
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