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Calibration unit and method for critical dimension testing

A technology of key size and correction device, which is applied to the exposure device of the photoengraving process, the photoengraving process of the pattern surface, and the originals used for photomechanical processing, etc. and other problems, to achieve the effect of simplifying the calibration work and ensuring the calibration accuracy

Inactive Publication Date: 2014-04-09
HEFEI BOE OPTOELECTRONICS TECH +1
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Problems solved by technology

The test period of this calibration method is long and the calibration cost is high
In particular, as the use time prolongs, the brightness of the light source of the Critical Dimension (CD) test equipment will gradually decrease, which leads to the constant need for correction of the test value, so the workload of correction becomes larger, which is not conducive to the critical dimension of the product process. Size monitoring

Method used

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  • Calibration unit and method for critical dimension testing
  • Calibration unit and method for critical dimension testing
  • Calibration unit and method for critical dimension testing

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Embodiment Construction

[0028] When performing the test of the graphic critical dimension DICD and the test value correction, or the test of the final critical dimension (Final Inspection Critical Dimension, FICD) after etching and stripping, or the determination of the CD bias (Bias), it can be used in the mask Set a group of Marks on the plate, and this group of Marks will form a group of patterns with photoresist on the glass substrate after the photolithography process. The actual value of DICD can be obtained from this group of patterns, and the actual value of this group of Marks can be obtained. The value is used as the benchmark for DICD test brightness adjustment, thus solving the calibration problem of DICD test value. For example: the actual value of DICD is obtained from a microscopic image acquisition device such as a microscope or an automatic camera with a magnification function, the value is compared with the DICD value detected by the test equipment, and the CD test result is correcte...

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Abstract

The invention discloses a calibration unit and a method for critical dimension testing. At least a group of Marks are arranged on a Mask. The actual value of DICD is obtained by figures formed on a substrate after an etching process is performed by utilization of the Mask, accordingly, the CD testing results are calibrated. The unit and the method simplify calibration of the DICD testing value and guarantee the calibration precision.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a calibration device and method for critical dimension testing. Background technique [0002] For the pattern critical dimension test in the traditional photolithography process, the method of pattern edge detection is usually used to determine the test value. The test value of this test method is greatly affected by the brightness of the charge-coupled device (CCD) imaging pattern, so it is necessary to adjust the light adjustment correction for the obtained test value to make the test value closer to the real value. [0003] The current correction method for the test value is usually to compare it with the test value of the scanning electron microscope (SEM) sample, and then adjust the brightness to the best test level. The test period of this correction method is long, and the correction cost is high. In particular, as the use time prolongs, the brightness of the light sour...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F1/44
Inventor 黄寅虎刘同军白明基
Owner HEFEI BOE OPTOELECTRONICS TECH
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