A kind of photoresist wall forming method

Abstract

The invention provides a photoresistance wall forming method. The method comprises comprises the following steps: forming a flat plate by using an injection molding technique, wherein a first boss and a second boss with the same height are arranged on the front side of the plate, and the first boss and the second boss are isolated from each other by a groove; gluing the front side of the plate and laminating the plate and a first substrate, and grinding the back side of the plate to be thin till the first boss and the second boss are isolated from the bottom part; radiating by using an ultraviolet lamp so as to eliminate the viscosity of the first substrate; separating the first boss from the first substrate by using a transfer substrate, and bonding the back side of the first boss with the glue through rolling with a second substrate; finally relieving the temporary bonding of the first boss with the transfer substrate so as to form the photoresistance wall structure. The method has the advantages that as the photoresistance wall is independently formed, compared with the conventional photoetching method using photoresist, the method has the advantages that the possibility of unqualified devices caused by pollution in the photoresistance wall forming process is greatly reduced, and due to a material for injection molding, the structural strength of a photomask of the photoresistance wall cover is improved, and the problems of reliability such as layering and dissociation are effectively reduced.

Description

technical field [0001] The invention relates to a method for forming a photoresist wall, which belongs to the technical field of semiconductor manufacturing. Background technique [0002] The photoresist wall photomask currently used in image sensors is made by spin-coating photoresist on a glass wafer, and forming a regularly arranged photoresist wall structure on the photoresist through exposure and development, such as figure 1 shown. The main problem of using photoresist to make the photoresist wall structure is that the photoresist material itself has small rigidity, large thermal expansion coefficient, and strong water absorption. In the subsequent baking process and reliability test, photoresist wall delamination or delamination from the glass often occurs. The phenomenon of shedding seriously affects product quality and service life. At the same time, the residue after exposure and development can easily lead to reliability problems of the sensor. As image sensors...

AI Technical Summary

Problems solved by technology

The main problem of using photoresist to make the photoresist wall structure is that the photoresist material itself has small rigidity, large thermal expansion coefficient, and strong water absorption. In the subsequent baking process and reliability test, photoresist wall delamination or delamination from the glass often occurs. The phenomenon of shedding seriously affects product quality and service life

At the same time, the residue after exposure and development can easily lead to reliability problems of the sensor

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