A controllable precursor channel

Abstract

The invention discloses a hydride vapor phase epitaxy (HVPE) spray nozzle design, and particularly provides a controllable precursor passage. The passage is located in a suspended upright or inverted support HVPE system and comprises a precursor air inlet, a passage top fixed end, a central control rod and a passage outer wall, wherein the air inlet is located between the top of the passage and the top end of the passage outer wall; an upright screw stud is embedded in the top of the passage; the control rod is located in the central position of the passage and divided into an upper section and a lower section; the upper section is a cylinder of which the top end is provided with an inner threaded sleeve hole; the lower section is a cone-shaped, circular truncated cone-shaped, inverted circular truncated cone-shaped or cylinder-shaped control end; the passage outer wall at least comprises two or more cylinders of different diameters, wherein the diameter of the first cylinder is smaller than that of the second cylinder, a transition section is arranged between the two cylinders, the second cylinder is connected with one end of an apron extension section. The controllable precursor passage provided by the invention can optimize the radial distribution of a precursor on the surfaces of substrates and meanwhile expands means for fluid field regulation and control of the precursor.

Description

technical field [0001] The invention relates to a channel and method for controlling precursors in a vapor deposition growth chamber. Background technique [0002] In recent years, III-V thin-film materials have become a new type of semiconductor material that has attracted much attention internationally, and are particularly important in the manufacture and development of various semiconductor devices, such as light-emitting diodes (LEDs), laser diodes (LDs), Electronic devices of transistors and integrated circuits. Compared with traditional semiconductor materials, III-V thin film materials represented by gallium nitride have wide band gap, stable chemical properties, high temperature resistance and corrosion resistance. GaN-based devices have the characteristics of radiation resistance, high frequency and high power . Its application prospects in automotive, aviation, medical, military and general lighting are very extensive. Therefore, the research and development of...

AI Technical Summary

Problems solved by technology

Whether it is a circular nozzle or an annular nozzle structure, the common problem is that under this nozzle structure, the radial distribution of the precursor on the substrate surface flow field is not uniform, for example, the radial direction under the concentric annular nozzle. The characteristics of the flow field are that the middle area of ​​the ring is high and the two sides are low; the radial flow field under the circular nozzle is characterized by being high at the center of the circle and low at the periphery, showing a normal distribution; both of the above two types are not conducive to the uniform growth of the substrate material

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