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Controllable precursor passage

A precursor and channel technology, applied in the direction of single crystal growth, polycrystalline material growth, chemical instruments and methods, etc., can solve the problems of uneven radial distribution of the precursor flow field, which is not conducive to the growth of substrate materials, etc., and achieve growth thickness uniform effect

Active Publication Date: 2014-03-26
SINO NITRIDE SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Whether it is a circular nozzle or an annular nozzle structure, the common problem is that under this nozzle structure, the radial distribution of the precursor on the substrate surface flow field is not uniform, for example, the radial direction under the concentric annular nozzle. The characteristics of the flow field are that the middle area of ​​the ring is high and the two sides are low; the radial flow field under the circular nozzle is characterized by being high at the center of the circle and low at the periphery, showing a normal distribution; both of the above two types are not conducive to the uniform growth of the substrate material

Method used

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Examples

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Effect test

Embodiment 1

[0026] In a suspended vertical HVPE system, such as figure 1 As shown, the precursor gas flows from the terminal of the source gas supply system through the channel inlet 106 and enters the precursor channel 107; the outer wall 108 of the channel cavity is composed of two sections, the upper section is cylindrical, and the lower section is a skirt extension section , the height of the skirt and the expansion angle depend on the size of the substrate, the upper and lower sections are coaxial, and the diameters of the joints are equal. The central position of the channel 107 is a control rod, and the central position of the upper cylinder 101 of the control rod is provided with an internal thread sleeve hole 103, and the internal thread 103 matches the external thread of the stud 104, as figure 2 As shown; the stud 104 is a double-ended stud, one end of which is connected to the fixed wall 105 at the top of the precursor channel, and its body is connected to the stud 104 with t...

Embodiment 2

[0028] In this example, if figure 1 As shown, the precursor channel 107 is located in a vertical HVPE system, and the precursor is a nitrogen-containing gas or a group III halide gas, and the precursor gas enters the precursor channel 107 through the gas inlet 106 , the air inlet 106 is located between the top of the channel 105 and the top of the channel outer wall 108, the channel outer wall 108 is composed of a cylinder and a skirt body expansion section from top to bottom, the diameter of the upper end of the skirt body is consistent with the diameter of the cylinder, and the diameter of the skirt body The bulk expansion angle is determined by the effective area requirement of the growth material for the diffusion of the precursor. The center of the precursor channel 107 is a control rod, the control rod includes an upper cylinder 101 and a lower control end 102, the center of the top of the cylinder 101 has an internally threaded bushing 103, and the internally threaded b...

Embodiment 3

[0030] In this example, if Figure 4 As shown, in the hanging vertical HVPE system, the precursor channel 107 includes a precursor inlet 106 , an outer wall 108 of the channel, a central control rod of the channel and a fixed end 105 at the top of the channel. The precursor gas flows from the terminal of the source gas supply system through the channel inlet 106 and enters the precursor channel 107; the center of the channel 107 is a control rod, and the control rod includes upper and lower sections, and the upper section is a cylinder 101. The central position of the top of the cylinder 101 has an internally threaded sleeve hole 103, and the internally threaded sleeve hole 103 can be well connected with the stud 104, as figure 2As shown, the stud 104 is fixed to the fixed end 105 at the top of the precursor channel; the lower control end 102 is one of a cone, a circular frustum, an inverted circular frustum or a cylinder, respectively as image 3 As shown in (a), (b), (c) a...

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Abstract

The invention discloses a hydride vapor phase epitaxy (HVPE) spray nozzle design, and particularly provides a controllable precursor passage. The passage is located in a suspended upright or inverted support HVPE system and comprises a precursor air inlet, a passage top fixed end, a central control rod and a passage outer wall, wherein the air inlet is located between the top of the passage and the top end of the passage outer wall; an upright screw stud is embedded in the top of the passage; the control rod is located in the central position of the passage and divided into an upper section and a lower section; the upper section is a cylinder of which the top end is provided with an inner threaded sleeve hole; the lower section is a cone-shaped, circular truncated cone-shaped, inverted circular truncated cone-shaped or cylinder-shaped control end; the passage outer wall at least comprises two or more cylinders of different diameters, wherein the diameter of the first cylinder is smaller than that of the second cylinder, a transition section is arranged between the two cylinders, the second cylinder is connected with one end of an apron extension section. The controllable precursor passage provided by the invention can optimize the radial distribution of a precursor on the surfaces of substrates and meanwhile expands means for fluid field regulation and control of the precursor.

Description

technical field [0001] The invention relates to a channel and method for controlling precursors in a vapor deposition growth chamber. Background technique [0002] In recent years, III-V thin-film materials have become a new type of semiconductor material that has attracted much attention internationally, and are particularly important in the manufacture and development of various semiconductor devices, such as light-emitting diodes (LEDs), laser diodes (LDs), Electronic devices of transistors and integrated circuits. Compared with traditional semiconductor materials, III-V thin film materials represented by gallium nitride have wide band gap, stable chemical properties, high temperature resistance and corrosion resistance. GaN-based devices have the characteristics of radiation resistance, high frequency and high power . Its application prospects in automotive, aviation, medical, military and general lighting are very extensive. Therefore, the research and development of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/14C30B29/40
Inventor 刘鹏魏武赵红军张俊业童玉珍张国义
Owner SINO NITRIDE SEMICON
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