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Piezoelectric bimorph and preparation method thereof

A piezoelectric bimorph and bimorph technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve the problems of inability to transmit weak electrical signals, failure of piezoelectric devices, and thickness of adhesive layer Inhomogeneity and other problems, to achieve the effect of stable and reliable working process, reduced diffusion depth and long service life

Active Publication Date: 2014-03-19
CHONGQING ZHONGLEI SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The middle bonding layer of the piezoelectric bimorph prepared by the bonding process is a non-conductor and has a certain thickness. Once the process is not properly controlled, the thickness of the bonding layer will be uneven, resulting in a weak electrical signal (generally 0) generated by the piezoelectric crystal. -1V) sometimes fails to transmit, eventually causing the piezoelectric device to fail

Method used

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  • Piezoelectric bimorph and preparation method thereof
  • Piezoelectric bimorph and preparation method thereof
  • Piezoelectric bimorph and preparation method thereof

Examples

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Embodiment 1

[0024] The piezoelectric bimorph in this embodiment is a wafer structure, the upper and lower piezoelectric bodies use the same soft PZT material, and the electrode layer uses silver-palladium electrodes. figure 1 As shown, the lower piezoelectric body 1, the upper piezoelectric body 2, the lower conductive electrode layer 3, the upper conductive electrode layer 4, and the common electrode layer 5 are included. The lower piezoelectric body 1 and the upper piezoelectric body 2 have the same size.

[0025] The preparation method of the piezoelectric bimorph in this embodiment includes the following steps:

[0026] The first step: After the sintered lower piezoelectric body 1 and upper piezoelectric body 2 are respectively ground, they are washed with ultrasonic water, ultrasonic alcohol and ultrasonic acetone respectively, and dried at 120°C for later use;

[0027] Step 2: Use a printing process to print silver and palladium pastes on both sides of the lower piezoelectric body ...

Embodiment 2

[0034] The piezoelectric bimorph of this embodiment has a rectangular structure, the upper and lower piezoelectric bodies are made of the same rigid PZT material, and the electrode layer is a silver electrode; the structure includes a lower piezoelectric body 1, an upper piezoelectric body 2, a lower conductive electrode layer 3. The upper conductive electrode layer 4, the common electrode layer 5, and the lower piezoelectric body have the same size as the upper piezoelectric body.

[0035] The preparation method of the piezoelectric bimorph in this embodiment includes the following steps:

[0036] The first step: After the sintered lower piezoelectric body 1 and upper piezoelectric body 2 are respectively ground, they are washed with ultrasonic water, ultrasonic alcohol and ultrasonic acetone respectively, and dried at 120°C for later use;

[0037] Step 2: Use a printing process to print silver paste on both sides of the lower piezoelectric body 1 and the upper piezoelectric...

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Abstract

The invention relates to a piezoelectric bimorph and a preparation method thereof. The piezoelectric bimorph comprises a lower piezoelectric body, an upper piezoelectric body, a lower conductive electrode layer, an upper conductor electrode layer and a common electrode layer, wherein the lower piezoelectric body and the upper piezoelectric body are made by a PZT piezoelectric material. The piezoelectric bimorph is characterized in that the lower piezoelectric body and the upper piezoelectric body are connected through the high-temperature pressure sintered common electrode layer. The related preparation method of the piezoelectric bimorph comprises the steps of printing electrodes at the surfaces of the upper piezoelectric body and the lower piezoelectric body, drying, and realizing the high-temperature pressure sintered common electrode layer under a certain pressure. The common electrode layer has bonding and conducting functions, and can also be processed into a bimorph with a special structure subsequently. The piezoelectric bimorph solves a bonding layer insulation problem of the piezoelectric bimorph, and has the characteristics of stable and reliable working process and long service life.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric ceramic drivers and sensors, in particular to a piezoelectric bimorph and a preparation method thereof. Background technique [0002] With the development of electronic technology, the bimorph type piezoelectric driver or sensor formed by using the direct piezoelectric effect or inverse piezoelectric effect of piezoelectric technology can be used as the core control element of intelligent control. Piezoelectric pumps for conveying gas and liquid mostly use simply supported beam bimorphs, which use the inverse piezoelectric effect of the piezoelectric chip to drive the flexural vibration of the entire piezoelectric drive vibrator to change the volume formed between the piezoelectric drive vibrator and the housing. The volume of the chamber realizes continuous negative pressure suction and pressurized discharge of gas and liquid. The piezoelectric valve also uses a cantilever beam bimorph. Un...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/273H01L41/083H10N30/053H10N30/50
Inventor 王素贞
Owner CHONGQING ZHONGLEI SCI & TECH
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