Preparation method of high-performance ZAO (Zinc Aluminum Oxide) rotating target material
A rotating target, high-performance technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of low target density, large equipment investment, etc., achieve high density, improve efficiency, and resistivity small effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0025] The preparation method of a high-performance ZAO rotating target in this embodiment is specifically carried out according to the following steps: the mold is placed on a press, molybdenum disulfide powder is coated on the contact surface between the ZAO powder and the mold, and 2.5kg of ZAO powder is loaded Finally, press it into a rough billet under a pressure of 2MPa; move the rough billet together with the mold into a vacuum hot-press furnace, and evacuate to a vacuum degree of 50Pa; after pressurizing to 15MPa, heat up to 1100°C at a speed of 6°C / min. Heat preservation and pressure for 2.5 hours; then lower the temperature to 80°C and release from the furnace to obtain the ZAO rotating target. Take out the target material, and use the Archimedes method to measure the density to be 5.57g / cm 3 , which is 99.46% of the theoretical density; the target resistivity measured by the four-pin detector method is 3*10 -4 Ω·cm.
[0026] The ZAO powder used in this example is ...
Embodiment 2
[0028] The preparation method of a high-performance ZAO rotating target in this embodiment is specifically carried out according to the following steps: place the mold on the press, coat the molybdenum disulfide powder on the contact surface between the ZAO powder and the mold, and put 5kg of ZAO powder into it. , pressed into a rough billet under a pressure of 10MPa; move the rough billet together with the mold into a vacuum hot-press furnace, and evacuate to a vacuum degree of 48Pa; after pressurizing to 40MPa, raise the temperature to 1350°C at a speed of 6°C / min, and keep it warm Hold the pressure for 5.5 hours; then lower the temperature to 90°C and take out the furnace to obtain the ZAO rotating target. Take out the target material, and use the Archimedes method to measure the density to be 5.58g / cm 3 , which is 99.64% of the theoretical density; the target resistivity measured by the four-pin detector method is 5*10 -4 Ω·cm.
[0029] The ZAO powder used in this exampl...
Embodiment 3
[0031] The preparation method of a high-performance ZAO rotating target in this embodiment is specifically carried out according to the following steps: place the mold on the press, coat the molybdenum disulfide powder on the contact surface between the ZAO powder and the mold, and put 5kg of ZAO powder into it. , pressed into a rough billet under a pressure of 3MPa; move the rough billet together with the mold into a vacuum hot-press furnace, and evacuate to a vacuum degree of 10Pa; after pressurizing to 37MPa, raise the temperature to 1400°C at a rate of 6°C / min, and keep it warm Hold the pressure for 6 hours; then cool down to 70°C and take out the furnace to obtain the ZAO rotating target. Take out the target material, and use the Archimedes method to measure the density to be 5.59g / cm 3 , which is 99.80% of the theoretical density; the target resistivity measured by the four-pin detector method is 9*10 -4 Ω·cm.
[0032] The ZAO powder used in this example is prepared ac...
PUM
Property | Measurement | Unit |
---|---|---|
Density | aaaaa | aaaaa |
Resistivity | aaaaa | aaaaa |
Density | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information

- R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com