A kind of high remnant polarization and high dielectric constant bife0.96-ymn0.04cryo3 ferroelectric thin film and preparation method thereof

A high dielectric constant and polarization technology, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problems of limited practical application, large leakage current density, inability to obtain saturation and large residual polarization. hysteresis loop and other problems, to achieve the effects of precise and controllable chemical composition, uniform doping, and reduction of surface defects

Active Publication Date: 2015-07-29
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, pure phase BiFeO 3 Due to the large leakage current density of the thin film, it cannot obtain the hysteresis loop with saturation and large remanent polarization, which limits its practical application.
In addition, the lower dielectric constant also limits the BiFeO 3 Application of thin films in dielectric properties such as capacitors

Method used

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  • A kind of high remnant polarization and high dielectric constant bife0.96-ymn0.04cryo3 ferroelectric thin film and preparation method thereof
  • A kind of high remnant polarization and high dielectric constant bife0.96-ymn0.04cryo3 ferroelectric thin film and preparation method thereof
  • A kind of high remnant polarization and high dielectric constant bife0.96-ymn0.04cryo3 ferroelectric thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·5H 2 O, C 4 h 6 MnO 4 4H 2 O and Cr(NO 3 ) 3 9H 2 O is mixed at a molar ratio of 1.05:0.96:0.04:0.00 and dissolved in ethylene glycol methyl ether, then acetic anhydride is added to it to fully dissolve bismuth nitrate, iron nitrate, manganese acetate and chromium nitrate, and magnetically stirred for 3 hours to obtain Stable BiFe 0.96 mn 0.04 o 3 Precursor solution; Wherein, the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1, BiFe 0.96 mn 0.04 o 3 The concentration of metal ions in the precursor solution is 0.003-0.3mol / L;

[0024] 2) Spin-coating BiFe 0.96 mn 0.04 o3 Precursor liquid uniform glue is prepared on the FTO / glass substrate whose surface reaches the atomic cleanliness. The glue uniform speed is 3500r / min, and the glue is glued for 15s. Annealing treatment yields high remnant polarization and high dielectric constant BiFe 0.96 mn 0.04 o 3 ferroelectric thin film. Wherein, ...

Embodiment 2

[0027] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·5H 2 O, C 4 h 6 MnO 4 4H 2 O and Cr(NO 3 ) 3 9H 2 O was mixed at a molar ratio of 1.05:0.95:0.04:0.01 and dissolved in ethylene glycol methyl ether, then acetic anhydride was added to it to fully dissolve bismuth nitrate, iron nitrate, manganese acetate and chromium nitrate, and magnetically stirred for 3 hours to obtain Stable BiFe 0.95 mn 0.04 Cr 0.01 o 3 Precursor solution; Wherein, the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1, BiFe 0.95 mn 0.04 Cr 0.01 o 3 The concentration of metal ions in the precursor solution is 0.003-0.3mol / L;

[0028] 2) Spin-coating method on the BiFe 0.95 mn 0.04 Cr 0.01 o 3 Precursor solution uniform glue is prepared on the FTO / glass substrate whose surface reaches the atomic cleanliness. The glue uniform speed is 4000r / min, and the glue is glued for 15s. Treatment to obtain high remanent polarization and high dielectric constant BiFe 0.95 mn 0.04...

Embodiment 3

[0031] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 ·5H 2 O, C 4 h 6 MnO 4 4H 2 O and Cr(NO 3 ) 3 9H 2 O is mixed at a molar ratio of 1.05:0.94:0.04:0.02 and dissolved in ethylene glycol methyl ether, then acetic anhydride is added to it to fully dissolve bismuth nitrate, iron nitrate, manganese acetate and chromium nitrate, and magnetically stirred for 3 hours to obtain Stable BiFe 0.94 mn 0.04 Cr 0.02 o 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1, BiFe 0.94 mn 0.04 Cr 0.02 o 3 The concentration of metal ions in the precursor solution is 0.003-0.3mol / L;

[0032] 2) Spin-coating BiFe 0.94 mn 0.04 Cr 0.02 o 3 Precursor liquid uniform glue is prepared on the FTO / glass substrate whose surface reaches atomic cleanliness. The glue uniform speed is 3600r / min, and the glue is glued for 15s. Annealing treatment yields high remnant polarization and high dielectric constant BiFe 0.94 mn 0.04 Cr 0.02 o 3 Fe...

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Abstract

The invention relates to a BiFe0.96-yMn0.04CryO3 ferroelectric film with high remanent polarization and high dielectric constant and a preparation method thereof. The method comprises the steps of mixing bismuth nitrate, ferric nitrate, manganese acetate and chromic nitrate according to the mole ratio of 1.05: (0.96-y): 0.04: y, then, dissolving a mixture into mixed ethylene glycol monomethyl ether, and then, adding acetic anhydride, so as to obtain a BiFe0.96-yMn0.04CryO3 precursor solution with the metal ion concentration of 0.003-0.3mol / L; uniformly dispensing the BiFe0.96-yMn0.04CryO3 precursor solution on a FTO / glass substrate, of which the surface reaches atomic cleanliness, by adopting a spin-coating method, so as to prepare a film, then, drying to obtain a dry film, and then, adopting a layer-by-layer annealing process, thereby obtaining the crystalline BiFe0.96-yMn0.04CryO3 film. The method has the advantages that the requirements for equipment are simple, the experimental conditions are easily met, the prepared film is relatively good in uniformity and easy in doped amount control, and the ferroelectric properties and dielectric properties of the film can be improved greatly.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a high remanent polarization and high dielectric constant BiFe 0.96-y mn 0.04 Cr y o 3 Ferroelectric thin film and its preparation method. Background technique [0002] BiFeO 3 As one of the very few new single-phase multiferroic materials with ferroelectricity, ferromagnetism, antiferroelectricity and antiferromagnetism at room temperature. BiFeO 3 It has a simple perovskite structure with trigonal distortion, its ferroelectric Curie temperature at room temperature Tc=810°C, and its ferromagnetic Neel temperature TN=380°C. BiFeO 3 Thin films have aroused great interest due to their wide application potential in information storage, spintronic devices, information storage, image display, pyroelectric effect, and miniaturized integrated electronic devices. However, pure phase BiFeO 3 Due to the large leakage current density of the thin film, it cannot obtain the hyster...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强刘文龙
Owner SHAANXI UNIV OF SCI & TECH
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