Trench isolation structure and forming method thereof

Abstract

The embodiments of the invention provide a trench isolation structure and a forming method thereof. The method comprises: providing a substrate; forming a trench in the substrate; correspondingly forming a first insulation layer in the trench to cover the trench; correspondingly forming a nitrogen lining layer on the first insulation layer; forming a second insulation layer on the nitrogen lining layer and filling up the trench; etching the second insulation layer to enable the upper surface of the second insulation layer to be lower or equal to the upper surface of the substrate; and forming a third insulation layer on the second insulation layer to cover the second insulation layer so that the third insulation layer, the first insulation layer, the nitrogen lining layer and the second insulation layer form the trench isolation structure. By using the trench isolation structure and the forming method thereof, gaps can be prevented from forming in the trench isolation structure, and leakage current can be reduced.

Description

technical field [0001] The present invention relates to trench isolation structures and methods of forming the same, and more particularly to a method for avoiding the formation of voids in trench isolation structures. Background technique [0002] With the advancement of semiconductor technology and application requirements, non-volatile memory technology has rapidly developed into a common and indispensable electronic product in daily life. Compared with only needing to store a small amount of boot code in the past, non-volatile memory devices often need to store gigabits (GB) of music and video data in today's applications, and therefore bring great opportunities for the development of non-volatile memory. Come revolutionary change. [0003] In non-volatile memory devices, shallow trench isolation (STI) is one of the important elements for isolating adjacent semiconductor devices. However, in the current manufacturing process, the isolation effect of the formed shallow ...

AI Technical Summary

Problems solved by technology

However, in the current manufacturing process, the isolation effect of the formed shallow trench isolation structure is still not ideal, so that the non-volatile memory device may have problems such as leakage current and low writing rate.

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