Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for predicting components by analytical process to prepare Fe-Ga alloy film

A technology of alloy thin film and analysis method, which is applied in the direction of material selection for magnetostrictive devices, metal material coating process, manufacture/assembly of piezoelectric/electrostrictive devices, etc., can solve the problem of difficult preparation of low melting point gallium metal Alloy film and other issues

Inactive Publication Date: 2015-07-01
NANCHANG INST OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method adopts an analytical formula, which can calculate and predict the composition of the film prepared by magnetron sputtering according to the ratio of the patch metal area to the alloy target area, which can solve the difficulty in preparing low melting point gallium metal alloys by traditional multi-target magnetron sputtering preparation methods Film Disadvantages

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for predicting components by analytical process to prepare Fe-Ga alloy film
  • Method for predicting components by analytical process to prepare Fe-Ga alloy film
  • Method for predicting components by analytical process to prepare Fe-Ga alloy film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] Using JZCK-600F multi-functional coating equipment, using alloy single target for magnetron sputtering. Alloy target composition is Fe 75 Ga 25 . A circular alloy target with a diameter of 60 mm and a thickness of 3 mm is installed on the target holder, and the target base distance is 100 mm.

[0075] Coating sputtering process parameters and operation steps are:

[0076] 1. Selection and pretreatment of substrates

[0077] Choose polished glass or Si wafer as the substrate. Before sputtering, the surface of the substrate is strictly cleaned with acetone, ethanol, and deionized water to remove oil, dirt, and oxides. Ultrasonic cleaning is used to enhance the cleaning effect. After cleaning, dry it with a heat source for later use;

[0078] 2. Prediction and calculation of film composition

[0079] A certain number of iron sheets are selected, and the pure iron sheets are attracted and attached to the etching area of ​​the alloy target by magnetic force, and the pu...

Embodiment 2

[0095] Using JZCK-600F multi-functional coating equipment, using alloy single target for magnetron sputtering. Alloy target composition is Fe 75 Ga 25 . A circular alloy target with a diameter of 60 mm and a thickness of 3 mm is installed on the target holder, and the target base distance is 100 mm.

[0096] Coating sputtering process parameters and operation steps are:

[0097] 1. Selection and pretreatment of substrates

[0098]Choose polished glass or Si wafer as the substrate. Before sputtering, the surface of the substrate is strictly cleaned with acetone, ethanol, and deionized water to remove oil, dirt, and oxides. Ultrasonic cleaning is used to enhance the cleaning effect. After cleaning, dry it with a heat source for later use;

[0099] 2. Prediction and calculation of film composition

[0100] A certain number of iron sheets are selected, and the pure iron sheets are attracted and attached to the etching area of ​​the alloy target by magnetic force, and the pur...

Embodiment 3

[0116] Using JZCK-600F multi-functional coating equipment, using alloy single target for magnetron sputtering. Alloy target composition is Fe 75 Ga 25 . A circular alloy target with a diameter of 60 mm and a thickness of 3 mm is installed on the target holder, and the target base distance is 100 mm.

[0117] Coating sputtering process parameters and operation steps are:

[0118] 1. Selection and pretreatment of substrates

[0119] Choose polished glass or Si wafer as the substrate. Before sputtering, the surface of the substrate is strictly cleaned with acetone, ethanol, and deionized water to remove oil, dirt, and oxides. Ultrasonic cleaning is used to enhance the cleaning effect. After cleaning, dry it with a heat source for later use;

[0120] 2. Prediction and calculation of film composition

[0121] A certain number of iron sheets are selected, and the pure iron sheets are attracted and attached to the etching area of ​​the alloy target by magnetic force, and the pu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

A method of preparing Fe-Ga alloy thin films using analytical methods to predict the composition, using JZCK-600F multi-functional coating equipment, using a single alloy target for magnetron sputtering. The alloy target composition is Fe75Ga25, and a circle with a diameter of 60 mm and a thickness of 3 mm is used. The alloy target is mounted on the target base, and the target-base distance is 100mm; the steps are: selection and pretreatment of the substrate, prediction and calculation of film composition, determination of the required iron sheet area, sputtering coating, sampling: wait for the film and substrate Only when the temperature of the film drops to room temperature can the prepared sample be taken out and placed in a drying dish to prevent the structure and performance of the film from changing in the air; use energy dispersive spectrometer EDS or X-ray fluorescence analysis (XRF) to detect the components. Compare with the predicted value and calculate the error so that the iron sheet area correction can be adjusted when sputtering again. The invention can solve the difficulty of preparing an alloy thin film by co-sputtering multi-target single target metal gallium with low melting point metal, and at the same time, it can facilitate the control of the composition of the thin film.

Description

technical field [0001] The invention relates to a method for preparing Fe-Ga alloy thin films by using a magnetron sputtering method, which belongs to the preparation technology of functional materials in the field of material processing engineering. Background technique [0002] At present, in the field of manufacturing integrated magnetostrictive devices, Fe-Ga alloy thin films have been paid more and more attention by people. The core technology in the development of thin film micro-devices is the preparation of thin films. The mechanical, physical and chemical properties of the film depend on the structure of the film, and the structure of the film is closely related to the composition of the film. [0003] Magnetron sputtering deposition technology is a common method for preparing metal and alloy thin films, and it is also the most commonly used technology for preparing giant magnetostrictive films. Magnetron sputtering deposition technology generally uses simple subs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/54C23C14/14H01L41/12H01L41/20H01L41/22H10N30/01H10N35/00H10N35/85
Inventor 晏建武罗亮张晨曙
Owner NANCHANG INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com