Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Phase shift blankmask and photomask using the flat panel display

A flat-panel display and phase-shift mask technology, applied in the field of phase-shift mask blanks and photomasks, can solve the problems of obstructing fine patterns, unclear boundary of the phase-shift layer, affecting the uniformity of the phase-shift layer, etc.

Active Publication Date: 2014-02-12
S & S TECH
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The slope formed in the pattern edge portion causes a difference in phase change between the pattern edge portion and the remaining portion, and affects the uniformity of the phase shift layer
In addition, the slope of the phase-shift layer in the edge part of the pattern causes the boundary between the phase-shift layers to become unclear, which hinders the formation of fine patterns

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase shift blankmask and photomask using the flat panel display
  • Phase shift blankmask and photomask using the flat panel display
  • Phase shift blankmask and photomask using the flat panel display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0072] Phase shift layer formation

[0073] In order to evaluate a phase shift mask blank according to an exemplary embodiment of the present invention, a multi-layer type phase shift layer was formed on a transparent substrate.

[0074] Specifically, a chromium (Cr) target is used as a sputtering target to form the phase shift layer by means of a sputtering process. In this case, the sputtering process is performed using at least one of the following gases: argon (Ar), nitrogen (N 2 ), carbon dioxide (CO 2 ), methane (CH 4 ), and nitric oxide (NO), and the phase shift layer is formed as a CrCON layer with a thickness of about

[0075] [Table 1]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

PURPOSE: A phase shift blank mask for a flat panel display is provided to reduce thickness of the phase shift layer, secure uniformity of phase shift layer, and manufacture large area FPD product with fine patterns. CONSTITUTION: Phase shift photo mask for a flat panel display (FPD) comprises a phase shift layer (104) pattern in transparent substrate. The phase shift layer pattern has at least two layers of multilayer. Each layer having phase shift layer is composed of materials capable of etching with the same etching solution; Corneas comprising phase shift layer pattern is made of material enabling to etch about same etching solution and has reciprocity other composition. The films are laminated every time. Upper edge portion and water level distance of lower edge portion; phase shift layer pattern are 0-100 nm.

Description

technical field [0001] The present invention relates to a phase shift mask blank and photomask for a flat panel display (hereinafter FPD), and more particularly, the present invention relates to a mask blank and photomask for a FPD, wherein The slope of the cross section of the phase shift layer pattern may be formed steeply. Background technique [0002] In a lithography process for manufacturing an FPD device or a semiconductor large scale integration (hereinafter referred to as LSI) device, a photomask manufactured from a mask blank is generally used to transfer a pattern. [0003] The mask blank is obtained by forming a thin film containing a metal material on the main surface of a light-transmitting substrate formed of synthetic quartz glass, followed by forming a resist layer on the thin film. The shape of the photomask is formed by patterning the thin film in the mask blank. Here, the films may be classified into a light-shielding layer, an anti-reflective layer (AR...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/26
CPCG03F1/26H01L21/0274
Inventor 南基守李东镐朴渊洙徐成旼金荣善
Owner S & S TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com