Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-temperature heating deposition table for chemical vapor deposition (CVD)

A technology of chemical vapor deposition and high-temperature heating, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as unsatisfactory stability, and achieve the characteristics of not easy to oxidize and corrode, uniform heating, and rapid temperature rise Effect

Active Publication Date: 2014-02-05
BEIJING TECHNOL SCI
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These innovative designs have played a positive role in the heating effect and efficiency of the deposition table, but the effective temperature that can be achieved does not exceed 800°C, and the stability is still not ideal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-temperature heating deposition table for chemical vapor deposition (CVD)
  • High-temperature heating deposition table for chemical vapor deposition (CVD)
  • High-temperature heating deposition table for chemical vapor deposition (CVD)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Silicon nitride thin films were grown on flat glass substrates using chemical vapor deposition (CVD). The flat glass substrate is placed on the high-temperature heating deposition table, the heater electrode is turned on, and the substrate is heated to 700°C and maintained. Ammonia gas and silane gas are fed in at a ratio of 15:1 to grow a silicon nitride film. After working for 100 hours, the temperature of the nickel-chromium alloy heating body measured by the thermocouple of the heating element is less than 900°C.

Embodiment 2

[0041]Boron-doped carbon coatings were grown on iron substrates using chemical vapor deposition (CVD). The iron substrate is placed on the high-temperature heating deposition table, the heating element electrode is turned on, and the substrate is heated to 1000°C and maintained. Boron trichloride, methane and hydrogen are passed in at a ratio of 1:2:30 to grow a boron-doped carbon coating. After working for 100 hours, the temperature of the nickel-chromium alloy heating body measured by the thermocouple of the heating element is less than 1150°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
melting pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-temperature heating deposition table for chemical vapor deposition (CVD), belonging to the field of preparation and production of materials. The design of the heating deposition table is improved, a 100nm chromium oxide film is coated on the inner surface of a deposition table top, and the efficiency of the deposition table top for receiving heat radiation can be improved by utilizing the black body coefficient, namely 0.8, of chromium oxide. In addition, for a heating body sealed inside the deposition table, an insulating body supporting piece is designed as a ceramic column array, so that the heat dissipation efficiency of the heating body can be improved while the supporting function is not influenced. Through the improvements, the heating efficiency and stability of the novel high-temperature heating deposition table can be greatly improved, the high-temperature heating deposition table can continuously and stably work in the temperature segment of 700 DEG C to 1000 DEG C, and fills a technical gap of the heating type deposition table on a high-temperature segment.

Description

technical field [0001] The invention relates to semiconductor device material preparation technology, in particular to a high-temperature heating deposition platform for chemical vapor deposition, which can be applied to the preparation of various new thin film materials. Background technique [0002] Chemical vapor deposition (CVD for short) is a material preparation method widely used in the preparation of new thin film materials, especially semiconductor device materials. Since the gas molecules or ions that participate in the reaction during the CVD preparation of materials need to be deposited on the substrate at a certain temperature according to different processes, some CVD systems are equipped with a deposition table that can heat the substrate by itself. [0003] When using a CVD system to prepare materials, high temperature is an important means to promote the reaction between gases. Generally, the heated deposition table can heat the substrate to about 700°C, wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/46C23C16/458
Inventor 陈良贤彭建施戈
Owner BEIJING TECHNOL SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com