Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing topological insulator Bi2Se3 film

A topological insulator and thin film technology, applied in chemical instruments and methods, crystal growth, from condensed steam, etc., can solve the problems of expensive equipment, high cost, and large energy consumption, and achieve lower concentration, lower equipment requirements, and reduced Se The effect of vacancy density

Inactive Publication Date: 2014-01-22
SOUTHWEST JIAOTONG UNIV
View PDF0 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this molecular beam epitaxy growth technique prepared Bi 2 Se 3 Thin film method, vacuum conditions of 10 -8 Pa, expensive equipment, large energy consumption, high cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing topological insulator Bi2Se3 film
  • Method for preparing topological insulator Bi2Se3 film
  • Method for preparing topological insulator Bi2Se3 film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A preparation of topological insulator Bi 2 Se 3 The method of thin film, its step is:

[0032] a. Preparation of single crystal blocks: Bismuth powder (Bi) with a purity of 99.999% and selenium powder (Se) with a purity of 99.999% were weighed in an argon glove box, ground, and pressed in a molar ratio of 2:3.2. slices; repacking air pressure is less than 1×10 -2 The vacuum quartz tube of Pa is placed in a tube furnace for sintering under an argon protective atmosphere, and then the vacuum quartz tube is pushed into cold water for quenching to obtain Bi 2 Se 3 monocrystalline block;

[0033] The temperature and time of sintering in the tube furnace are: heating up to 850°C for 5 hours, holding at 850°C for 12 hours, then uniformly cooling down to 620°C for 50 hours, and holding for 5 hours;

[0034] b. Precursor powder preparation: the Bi in step a 2 Se 3 The single crystal block was put back into the argon glove box and ground into powder;

[0035] c. Evaporat...

Embodiment 2

[0041] A preparation of topological insulator Bi 2 Se 3 The method of thin film, its step is:

[0042] a. Preparation of single crystal blocks: Bismuth powder (Bi) with a purity of 99.999% and selenium powder (Se) with a purity of 99.999% were weighed in an argon glove box, ground, and pressed in a molar ratio of 2:3.2. slices; repacking air pressure is less than 1×10 -2 The vacuum quartz tube of Pa is placed in a tube furnace for sintering under an argon protective atmosphere, and then the vacuum quartz tube is pushed into cold water for quenching to obtain Bi 2 Se 3 monocrystalline block;

[0043] The temperature and time of sintering in the tube furnace are: heating up to 850°C for 5 hours, holding at 850°C for 12 hours, then uniformly cooling down to 620°C for 50 hours, and holding for 5 hours;

[0044] b. Precursor powder preparation: the Bi in step a 2 Se 3 The single crystal block was put back into the argon glove box and ground into powder;

[0045] c. Evaporat...

Embodiment 3

[0051] A preparation of topological insulator Bi 2 Se 3 The method of thin film, its step is:

[0052] a. Preparation of single crystal blocks: Bismuth powder (Bi) with a purity of 99.999% and selenium powder (Se) with a purity of 99.999% were weighed in an argon glove box, ground, and pressed in a molar ratio of 2:3.2. slices; repacking air pressure is less than 1×10 -2 The vacuum quartz tube of Pa is placed in a tube furnace for sintering under an argon protective atmosphere, and then the vacuum quartz tube is pushed into cold water for quenching to obtain Bi 2 Se 3 monocrystalline block;

[0053] The temperature and time of sintering in the tube furnace are: heating up to 850°C for 5 hours, holding at 850°C for 12 hours, then uniformly cooling down to 620°C for 50 hours, and holding for 5 hours;

[0054] b. Precursor powder preparation: the Bi in step a 2 Se 3 The single crystal block was put back into the argon glove box and ground into powder;

[0055] c. Evaporat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for preparing a topological insulator Bi2Se3 film. The method comprises steps of a. weighing high purity bismuth powder (Bi) and high purity selenium powder (Se) in an argon glove box according to molar ratio of 2:3.2, grinding, and tabletting; packaging in a vacuum quartz tube, putting into a tube furnace for sintering under argon shield, then quenching, so as to obtain Bi2Se3 single crystal bulks; b. putting the Bi2Se3 single crystal bulks obtained in step a into the argon glove box again and grinding into powder; c. putting the powder obtained in step b into an evaporation coating machine, evaporating the powder onto substrates uniformly, and taking out after films form; and d. packaging the films obtained in step c into the vacuum quartz tube with air pressure less than 1*10-2Pa again, putting into the tube furnace for post annealing treatment under argon shield, then quenching, so as to obtain the Bi2Se3 film on the substrate. The Bi2Se3 film prepared by the method is smooth and compact, has good texture, and has typical stratified structure.

Description

technical field [0001] The invention belongs to the technical field of preparation of topological insulator materials, in particular to topological insulator Bi 2 Se 3 The technical field of thin film preparation. Background technique [0002] Topological insulator is a brand-new material form discovered in recent years, which has caused a huge research boom. Topological insulators have the same energy gap as ordinary insulators, but their topological properties are different. Under the action of spin-orbit coupling, a surface with no energy gap, spin splitting and linear dispersion relationship will appear on its surface or interface with ordinary insulators. state. The surface state of topological insulators is determined by the topological properties of the bulk energy band, which is different from the surface states caused by surface dangling bonds or surface potentials found in the past, and is protected by time-reversal invariant symmetry, which is not easy to be af...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/46C30B23/00C30B33/02
Inventor 张敏赵勇吕莉魏占涛羊新胜
Owner SOUTHWEST JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com