Channel voltage dividing field effect tube and production method based on high-energy ion implantation mode

Abstract

The invention discloses a channel voltage dividing field effect tube and production method based on a high-energy ion implantation mode. High-energy ion implantation equipment is used for carrying out gradual-deep implantation, an N-shaped channel is manufactured through diffusion for connecting a groove channel and a drain electrode, a similar-to-T-shaped structure formed by the N-shaped channel is of a 3D structure, a depletion zone formed between P and N is changed from a single vertical direction to a vertical direction and a horizontal direction, and accordingly the withstand voltage of the zone is greatly improved, the dosage concentration of the N channel can be increased, then the effect of lowering communicating resistance is achieved, and meanwhile P extends outwards and forms an obstruction between the bottom of a grid electrode and the drain electrode of the structure, and accordingly the capacitance between the bottom of the grid electrode and the drain electrode is nearly zero, the contacting part of the channel and the groove channel is small, so that the capacitance between the grid electrode and the drain electrode can be greatly removed, according to the two improvements, charging and discharging time during grid electrode opening and closing can be greatly shortened (Qgd can be greatly lowered), and accordingly opening and closing speed of an MOS tube is improved.

Description

technical field [0001] The invention relates to a power field effect tube, in particular to a channel partial pressure field effect tube based on high-energy ion implantation and a production method. Background technique [0002] When the back pressure of the power field effect (MOS) tube is high, because the epitaxial layer bears the back pressure, the resistivity of the epitaxial layer is relatively large and the thickness is relatively thick, resulting in the largest proportion of the resistance of the epitaxial layer to the overall on-resistance. Therefore, The effect of improving the performance of the power MOS tube by improving the resistance of the epitaxial layer is the most obvious. At present, the more popular method is to use a 3D structure similar to the Super Junction, such as figure 1 As shown, the 3D structure similar to Super Junction reduces the resistance of the epitaxial layer from two aspects. On the one hand, the space charge region that bears the bac...

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Problems solved by technology

However, most of Super Junction and 3D structures currently use single-layer molding methods. Due to the relatively difficult production technology, they are only in the hands of foreign brand manufacturers and a few domestic OEM companies.

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