Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of boron-doped p type carbon nanotube with high seebeck coefficient

A carbon nanotube and boron doping technology, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problem of low Seebeck coefficient of carbon nanotubes, difficulty in improving thermoelectric figure of merit, and difficulty in thermoelectric conversion efficiency, etc. question

Inactive Publication Date: 2014-01-08
TONGJI UNIV
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, it has always been the main goal of researchers to improve the efficiency of heat engines by improving the thermoelectric figure of merit of materials. Carbon nanotubes have been favored in the field of thermoelectricity in recent years because of their good electrical conductivity, but due to the relationship between electrical conductivity and thermal conductivity Strong mutual coupling, it is difficult to improve the thermoelectric figure of merit, and the thermoelectric conversion efficiency will be difficult to match with traditional power generation technologies
[0006] The present invention is to solve the problem of low Seebeck coefficient of existing carbon nanotubes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of boron-doped p type carbon nanotube with high seebeck coefficient
  • Preparation method of boron-doped p type carbon nanotube with high seebeck coefficient
  • Preparation method of boron-doped p type carbon nanotube with high seebeck coefficient

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1: Multi-walled carbon nanotubes prepared by chemical vapor deposition (Purity: >95%, OD: 30-50nm [OD=Outer Diameter] ID: 5-12nm [ID=Inner Diameter] Length: 10-20um ) and B 2 o 3 as the initial raw material. After mixing the solid powders of the two raw materials with different ratios evenly, dry them in a vacuum oven at 80°C for 1 to 8 hours, then put them into a φ20×40mm cylindrical corundum crucible, and then put the crucible into figure 1 In the shown ceramic tube, the upper end of the ceramic tube is connected to the argon cylinder, and the lower end of the ceramic tube is connected to the vacuum device. The specific operation is to close the upper argon gas intake switch first, and turn on the lower vacuum pump switch; then close the vacuum pump switch, open the argon gas intake switch, and cycle the above operation for 5 times (the purpose of the cycle is to exhaust the air in the ceramic tube ) Turn off the vacuum switch, and at the same time turn on ...

Embodiment 2

[0033] Example 2: Single-walled carbon nanotubes prepared by chemical vapor deposition (Purity: >90% OD: 1-2nm [OD=Outer Diameter] ID: 0.8-1.6nm [ID=Inner Diameter] Length: 5-30um ) and B 2 o 3 as the initial raw material. After mixing the solid powders of the two raw materials with different ratios evenly, dry them in a vacuum oven at 80°C for 1 to 8 hours, then put them into a φ20×40mm cylindrical corundum crucible, and then put the crucible into figure 1 In the shown ceramic tube, the upper end of the ceramic is connected to the argon cylinder, and the lower end is connected to the vacuum device. The specific operation is to first close the upper argon gas intake switch, open the lower end vacuum switch, then close the vacuum switch, open the argon gas intake switch, and cycle the above operation 5 times (the purpose of the cycle is to discharge the air in the ceramic tube into ) Turn off the vacuum switch, and at the same time turn on the exhaust switch at the lower end...

Embodiment 3

[0038] Example 3: Multi-walled carbon nanotubes prepared by arc method (Purity: >95% OD: 30-50nm [OD=Outer Diameter] ID: 5-12nm [ID=Inner Diameter] Length: 10-20um) and boric acid h 3 BO 3 as the initial raw material. After mixing the solid powders of the two raw materials with different ratios evenly, dry them in a vacuum oven at 80°C for 1 to 8 hours, then put them into a φ20×40mm cylindrical corundum crucible, and then put the crucible into figure 1 In the shown ceramic tube, the upper end of the ceramic is connected to the nitrogen cylinder, and the lower end is connected to the vacuum device. The specific operation is to first turn off the argon gas inlet switch at the upper end, turn on the vacuum pumping switch at the lower end, then turn off the vacuum pumping switch, turn on the nitrogen gas inlet switch, and cycle the above operation 5 times (the purpose of the cycle is to discharge the air in the ceramic tube) Turn off the vacuum switch, and at the same time turn...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of a boron-doped p type carbon nanotube with a high seebeck coefficient. The preparation method comprises the following steps: carrying out boron doping onto the carbon nanotube under a high temperature by using B2O3 as a boron source, wherein atoms B in B2O3 and atoms C in the carbon nanotube generate the following replacement reaction: XB2O3<+>(2+3x) C (nanotubes) to 2BxC (nanotubes)+3xCO; and then, washing, filtering and drying to obtain the boron-doped carbon nanotube (BxC). Percentage of atoms B in the boron-doped carbon nanotube (BxC) can be remarkably increased by increasing a ratio of a reactant B2O3 to the carbon nanotube, and maximum value of x can reach 0.1. According to the preparation method disclosed by the invention, reaction steps are simple and controllable, thermo-electric effect of the boron-doped carbon nanotube is remarkably strengthened and seebeck coefficient is greatly increased; moreover, the greater the x value is, the more obvious the improved seebeck coefficient is. Internal current carriers of the prepared boron-doped carbon nanotube focus on p type current carriers, so that the seebeck coefficient can reach up to 24.05 mu V / K which is increased by about 35% in comparison with that of the original carbon nanotube. The boron-doped carbon nanotube prepared by the method disclosed by the invention can be widely applied to a novel thermoelectric energy material based on temperature difference power generation.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and in particular relates to a preparation method of p-type carbon nanotubes with high Seebeck coefficient. Background technique [0002] With the acceleration of global industrialization, the shortage and depletion of energy in the world has become a problem that cannot be ignored in every country. At present and for a long period of time in the future, energy problems will seriously restrict the long-term stable development of society. The lack of non-renewable energy and the serious harm to the environment caused by the use of various fossil energy have attracted enough attention of human beings. The development of new clean and renewable energy is imminent. Thermoelectric material (thermoelectric material) is a new type of functional material that utilizes the interaction between carriers and lattice vibrations in the material to realize direct mutual conversion of thermal e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/02C01B32/174
Inventor 邱军解品成
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com