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Preparation method of gallium oxide film with hole-conducting properties and gallium oxide film with hole-conducting properties

A hole conduction, gallium oxide technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of inability to prepare gallium oxide film with hole conduction characteristics

Active Publication Date: 2015-10-28
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The object of the present invention is to propose a method for preparing a hole-conducting gallium oxide film, which provides an effective acceptor doping approach, and can Preparation of Gallium Oxide Films with Different Hole Concentrations

Method used

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  • Preparation method of gallium oxide film with hole-conducting properties and gallium oxide film with hole-conducting properties

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preparation example Construction

[0034] The invention discloses a method for preparing a hole-conducting gallium oxide film using metal organic chemical vapor deposition equipment. The method uses trimethylgallium or triethylgallium as the gallium source, and gaseous and / or liquid oxygen-containing substances as the The oxygen source is doped with a metal organic compound or a hydride or a nitride as a doping source, and then a gallium oxide film is prepared. Specifically, the method for preparing a gallium oxide film with hole-conducting properties of the present invention includes the following steps:

[0035] Step 1: Select the substrate and wash it for use. The cleaning adopts a standard cleaning process, which can clean the impurities on the surface of the substrate due to adsorption or reaction.

[0036] Step 2: Place the substrate on the growth tray in the sealed reaction chamber, and start the mechanical pump to evacuate the reaction chamber.

[0037] Step 3: When (the mechanical pump vacuumizes the r...

Embodiment 1

[0059] figure 1 It is a schematic diagram of the gas transport part of the metal organic chemical vapor deposition system used in the present invention.

[0060] The schematic diagram of the gas transport part of the metal organic chemical vapor deposition system used in this embodiment is as follows figure 1 As shown, the metal-organic chemical vapor deposition system includes a main reaction chamber 1 (the reaction chamber can achieve good sealing), and a rotatable tray 2 is arranged in the reaction chamber 1, and the tray 2 is used to place the substrate The reaction chamber 1 is connected to the mechanical pump 3 and the turbomolecular pump 4 through pipelines; in addition, the reaction chamber 1 is also provided with multiple pipelines connected to material supply devices (oxygen cylinders, argon cylinders, etc.).

[0061] Specifically, the preparation of the magnesium-doped gallium oxide film in this embodiment includes the following steps:

[0062] Step 1: Select the ...

Embodiment 2

[0070] figure 2 For the X-ray diffraction pattern of the zinc-doped gallium oxide film prepared in embodiment 2; image 3 For the atomic force microscope collection of zinc-doped gallium oxide film prepared in embodiment 2; Figure 4 Transmission and absorption spectra of the zinc-doped gallium oxide film prepared for Example 2.

[0071] The gas transport part of the metal-organic chemical vapor deposition system used in this example is the same as that in Example 1. Specifically, the preparation of the zinc-doped gallium oxide film includes the following steps:

[0072] Step 1: Select the sapphire substrate and go through the standard cleaning process before use.

[0073] Step 2: Send the substrate into the reaction chamber 1 and place it on the growth tray 2, then close the transfer port of the reaction chamber 1 to seal the reaction chamber 1, and turn on the mechanical pump 3 to evacuate the gas in the reaction chamber 1.

[0074] Step 3: Start the turbomolecular pump ...

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Abstract

The invention provides a preparation method of a gallium oxide film with a hole conduction characteristic as well as the gallium oxide film with the hole conduction characteristic. The preparation method of the gallium oxide film with the hole conduction characteristic comprises the following steps: placing a substrate in a growing tray in a sealed reaction chamber, heating the tray to a temperature which is 10-200 DEG C higher than the expected growing temperature of the gallium oxide film, and thermally treating the substrate; after reducing the temperature of the tray to the predetermined growing temperature, continuously exhausting air to the reaction chamber in a predetermined pressure range; introducing a gallium source, an oxygen source and a doping source to the reaction chamber so as to realize the epitaxial growth of the gallium oxide film; when the growing process of the gallium oxide film is finished, carrying out in-situ thermal treatment to the gallium oxide film or directly cooling and sampling the gallium oxide film slowly or carrying out thermal treatment after sampling to obtain the gallium oxide film with the hole conduction characteristic. The method provided by the invention is scientific and reasonable in step, overcomes many problems in the prior art, provides an effective acceptor doping path, and can be used for preparing gallium oxide films with different hole concentrations.

Description

technical field [0001] The invention relates to semiconductor material technology, in particular to a method for preparing a hole-conducting gallium oxide film and a hole-conducting gallium oxide film. Background technique [0002] Gallium oxide material has a direct bandgap structure with a forbidden band width of 4.9eV. It belongs to the monoclinic crystal system and has excellent chemical and thermal stability. It has important applications in semiconductor optoelectronic devices, radiation detection, and oxygen monitoring in smelting and casting. , is currently a research hotspot in the field of wide bandgap semiconductor materials. However, non-doped gallium oxide materials often exhibit high resistance characteristics, which greatly limits its application range in the preparation of various electronic devices. Although the gallium oxide film with electronic conductivity can be prepared by doping tin or silicon atoms, the research on the gallium oxide film with hole co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40
Inventor 梁红伟夏晓川柳阳申人升杜国同胡礼中
Owner DALIAN UNIV OF TECH
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