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Array substrate, manufacturing method of array substrate and display device

A technology of an array substrate and a manufacturing method, which are applied in the fields of an array substrate and a manufacturing method thereof and a display device, can solve the problems of affecting the performance of TFT, the metal electrode is easily oxidized, the resistance of the metal electrode is increased, and the like, and the effect of ensuring the performance is achieved.

Inactive Publication Date: 2013-12-11
BOE TECH GRP CO LTD +1
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Problems solved by technology

In order to improve the conductivity of metal electrodes, Cu or Cu alloys are generally used to prepare metal electrodes, but Cu is a metal that is easily oxidized. After using Cu or Cu alloys to prepare metal electrodes, a layer of Cu will appear on the surface of the metal electrodes. Oxide will increase the impedance of the metal electrode and reduce the conductivity; it will also make the surface of the metal electrode rougher, causing the insulating layer covering the metal electrode to fall off, and a short circuit will occur, which will seriously affect the performance of the TFT and cause the display to fail. show
Using other metals such as silver, aluminum or alloys to prepare metal electrodes also has the problem that metal electrodes are easily oxidized and affect TFT performance

Method used

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  • Array substrate, manufacturing method of array substrate and display device
  • Array substrate, manufacturing method of array substrate and display device

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Embodiment Construction

[0046] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0047] The embodiments of the present invention aim at the metal electrode formed on the surface of the metal electrode caused by the metal oxide formed on the surface of the metal electrode in the prior art, which causes the impedance of the metal electrode to increase and the electrical conductivity to decrease; and also makes the surface of the metal electrode relatively rough, so that The insulating layer covered on the metal electrode falls off, and a short circuit occurs, seriously affecting the performance of the TFT, resulting in the problem that the display cannot be displayed normally. An array substrate and its manufacturing method and display device are provided, which can remove the metal oxide on the surface of the metal la...

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Abstract

The invention provides an array substrate, a manufacturing method of the array substrate and a display device and belongs to the technical field of displaying. The manufacturing method of the array substrate includes the steps that a metal layer is formed on the substrate, and metallic oxide on the surface of the metal layer is removed. According to the technical scheme, the metal oxide on the surface of a metal electrode can be removed, and the performance of a thin film transistor on the array substrate is improved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] With the continuous advancement of technology, users' demand for liquid crystal display equipment is increasing, and TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Field Effect Transistor Liquid Crystal Display) has also become the mainstream display used in mobile phones, tablet computers and other products. [0003] The performance of a thin film transistor (TFT) determines the display quality of a liquid crystal display. The existing TFT array substrate generally includes a substrate substrate, a common electrode, a gate electrode, a gate insulating layer, a semiconductor layer, an ohmic contact layer, a source electrode, and a leakage current. electrode, passivation layer and pixel electrode, wherein the gate electrode, source electrode and drain e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L23/50H01L21/84H01L21/28G02F1/1368
CPCH01L29/66765H01L29/4908
Inventor 李登涛郑在纹郑载润崔大永王世凯金童燮耿军吕世伟
Owner BOE TECH GRP CO LTD
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