A piezoelectric memory cell based on ferroelectric tunnel junction and its preparation method

A technology of memory cells and ferroelectric tunnels, applied in the field of information storage, can solve the problems of difficult polarization reversal and poor retention, and achieve the effects of solving destructive reading, easy polarization reversal, and excellent electrical performance

Active Publication Date: 2016-02-24
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the destructive reading of the ferroelectric memory in the prior art, which requires the use of expensive asymmetric electrode materials, and also has a series of problems such as poor retention and difficulty in polarization reversal. The purpose of the present invention is to provide a A piezoelectric memory cell based on a ferroelectric tunnel junction with high piezoelectric coefficient, non-destructive reading and high storage density. The bottom electrode and top electrode of the piezoelectric memory cell can use the same or different metal electrodes or metal oxides The material electrode overcomes the limitation that only asymmetric electrodes can be used in the past, and is conducive to the realization of industrialization

Method used

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  • A piezoelectric memory cell based on ferroelectric tunnel junction and its preparation method
  • A piezoelectric memory cell based on ferroelectric tunnel junction and its preparation method
  • A piezoelectric memory cell based on ferroelectric tunnel junction and its preparation method

Examples

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Effect test

Embodiment 1

[0027] Preparation of Pt / Bi 3.15 Nd 0.85 Ti 3 o 12 / Pt ferroelectric tunnel junction piezoelectric memory unit, comprising the following steps:

[0028] (1) Preparation of Pt bottom electrode

[0029] The Pt metal bottom electrode was deposited on the Si substrate by vacuum evaporation coating method. In order to improve the adhesion between Pt and the substrate, Ti and SiO were also deposited between the Pt bottom electrode and the Si substrate. 2 Floor;

[0030] (2) Preparation of Bi by pulsed laser deposition method 3.15 Nd 0.85 Ti 3 o 12 ultrathin ferroelectric layer

[0031] In the vacuum chamber, the Bi 3.15 Nd 0.85 Ti 3 o 12 The target is installed on the multi-target rack, and the substrate with the Pt-plated bottom electrode is cleaned and installed on the substrate rack so that the direction of the laser beam is aligned with Bi 3.15 Nd 0.85 Ti 3 o 12 For the target, adjust the distance between the substrate and the target to 87mm. Turn on the mechan...

Embodiment 2

[0035] Preparation of Pt / BaTiO 3 / LaNiO 3 A ferroelectric tunnel junction piezoelectric memory cell, comprising the following steps:

[0036] (1)LaNiO 3 Preparation of bottom electrode

[0037] In a vacuum chamber, the LaNiO 3 The target is installed on the multi-target rack, and the Si substrate is cleaned and installed on the substrate rack so that the direction of the laser beam is aligned with the LaNiO 3 For the target, adjust the distance between the substrate and the target to 87mm. Turn on the mechanical pump and the molecular pump in sequence to pump the pressure in the vacuum chamber to 1*10 -7 mTorr. Turn on the KrF solid-state laser (laser wavelength is 248nm), adjust the energy of the single pulse of the laser to 320mJ, and the laser repetition rate is 10Hz; then feed oxygen into the vacuum chamber, and the oxygen pressure is fixed at 100mTorr, turn on the substrate heating device, and The substrate is heated up to 700°C; the laser beam emitted by the laser...

Embodiment 3

[0043] Preparation of Pt / BaTiO 3 / SrRuO 3 A ferroelectric tunnel junction piezoelectric memory cell, comprising the following steps:

[0044] (1)SrRuO 3 Preparation of bottom electrode

[0045] In a vacuum chamber, the SrRuO 3 The target is installed on the multi-target rack, and the Si substrate is cleaned and installed on the substrate rack so that the direction of the laser beam is aligned with the SrRuO 3 For the target, adjust the distance between the substrate and the target to 87mm. Turn on the mechanical pump and the molecular pump in sequence to pump the pressure in the vacuum chamber to 1*10 -7 mTorr. Turn on the KrF solid-state laser (laser wavelength is 248nm), adjust the energy of the single pulse of the laser to 320mJ, and the laser repetition rate is 10Hz; then feed oxygen into the vacuum chamber, and the oxygen pressure is fixed at 200mTorr, turn on the substrate heating device, and The substrate is heated to 700°C; the laser beam emitted by the laser is...

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Abstract

The invention discloses a piezoelectric memorizer unit based on ferroelectric tunnel junctions and a manufacturing method thereof. The piezoelectric memorizer unit is formed by the fact that a bottom electrode layer, an ultrathin ferroelectric layer and a top electrode layer are sequentially arranged on a substrate from bottom to top. The manufacturing method comprises the steps that the bottom electrode layer is firstly deposited on the substrate, the ultrathin ferroelectric layer is manufactured on the bottom electrode layer through a pulsed laser deposition method, then the top electrode layer is generated on the manufactured ultrathin ferroelectric layer, and the piezoelectric memorizer unit is obtained at least. The manufactured piezoelectric memorizer unit has high piezoelectric coefficients, can achieve non-destructive read, and is high in storage density; in addition, the bottom electrode and the top electrode can adopt the same or different metal electrodes or metallic oxide electrodes, the defect that only asymmetric electrodes can be adopted in the prior art is overcome, and industrialization realization is facilitated.

Description

technical field [0001] The invention relates to a piezoelectric memory unit based on a ferroelectric tunnel junction and a preparation method thereof, belonging to the technical field of information storage. Background technique [0002] In recent years, ferroelectric memory has attracted extensive attention due to its advantages of fast read and write speed, low power consumption and high storage density. It uses the polarization reversal of the ferroelectric film to realize the writing and reading of data, in which the ±P of the ferroelectric element r The states represent "1" and "0" in binary, respectively. At present, ferroelectric memories that have been commercialized are mainly capacitive memories based on ferroelectric capacitors, but this memory has the disadvantage of destructive readout. This is because the actual read operation process of the ferroelectric memory is to apply a known electric field on the capacitor of the storage unit (that is, to charge the ca...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/047H01L41/113H01L41/29H01L41/331
Inventor 王金斌袁硕果钟向丽陈婷李波周益春
Owner XIANGTAN UNIV
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