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A vertical constant current diode and its manufacturing method

A constant current diode, vertical technology, used in semiconductor/solid state device manufacturing, electrical components, circuits, etc., to achieve good constant current capability, increase flexibility, and save costs

Inactive Publication Date: 2015-10-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the problem with current constant current diodes is that

Method used

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  • A vertical constant current diode and its manufacturing method
  • A vertical constant current diode and its manufacturing method
  • A vertical constant current diode and its manufacturing method

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Embodiment

[0058] With the help of MEDICI simulation software provided by figure 1 The vertical constant current diode shown in the process simulation, the simulation parameters are: the initial silicon wafer thickness is about 200μm, the concentration is 1E18cm -3 ; The thickness of the first lightly doped N-type epitaxial layer 2 is about 13 μm, and the concentration is 1E15cm -3 ; The thickness of the second higher doped N-type epitaxial layer 6 is about 6 μm, and the concentration is 4E15cm -3 ; The dose of boron injected is about 4E15cm -3 Form the P+ heavily doped diffusion region 5, and the dose of phosphorus implanted is 4E15cm -3 N + heavily doped 4 is formed. cell 10 (1) 、10 (2). ...10 (6) The widths are equal, each width is about 20 μm, the depth of the P+ heavily doped diffusion region 5 is about 8 μm, and the cell 10 (1) 、10 (2). ...10 (6) The distance between two adjacent P+ heavily doped diffusion regions 5 is equal, about 2 μm. Terminal 12 (1) 、12 (2) 、12 (3)...

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Abstract

The invention relates to semiconductor technology, in particular to a vertical current regulative diode and a manufacturing method thereof. The vertical current regulative diode comprises an oxide layer, a highly doped N-type epitaxial layer, a lightly doped N-type epitaxial layer, a heavily doped N+ substrate and a metal anode which are sequentially stacked. The vertical current regulative diode is characterized by further comprising a cellular structure, a terminal structure and a cut-off ring which are sequentially connected, the cellular structure comprises a plurality of cells which are the same in structure and are sequentially connected, and the terminal structure comprises a plurality of terminals which are the same in structure and are sequentially connected. The vertical current regulative diode has the advantages that the diode is easily pinched off, pinch-off voltage can be below 5V, a pinch-off point more slowly changes along with increase of the voltage, constant current is more stable, the diode is more flexible in design and more reasonable in structure, an additional photo-etching plate can be omitted, and manufacturing cost is saved. The manufacturing method is particularly applicable to the current regulative diode.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a vertical constant current diode and a manufacturing method thereof. Background technique [0002] The constant current diode CRD (Current Regulative Diode) is a semiconductor constant current device that can maintain a constant current value within a certain operating voltage range. Semiconductor constant current diodes have high dynamic impedance, good constant current performance, and are cheap and easy to use, so they are widely used in constant current sources, voltage regulators, amplifiers, and protection circuits for electronic instruments. Especially for the LED (Light Emitting Diode) drive, using a constant current source to drive the LED can well solve the problems such as the sharp rise of the current caused by the negative temperature coefficient of the LED, which leads to the increase of the junction temperature and the shortening of the life. The constant current funct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 乔明何逸涛许琬陈朝勇张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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