A kind of flexible znO-based thin film transistor and preparation method thereof

Abstract

The invention belongs to the technical field of microelectronic and flat panel display, and particularly relates to a flexible ZnO based thin film transistor and a preparation method thereof. The flexible thin film transistor comprises a flexible substrate, a flat layer, an isolation buffer layer, a gate, a gate insulating layer, a source electrode, a drain electrode and semiconductor channel layers. N type and P type zinc oxide semiconductor channel layers are prepared by using a simple inorganic solution method, and the temperature of the whole process is controlled within 200 DEG C. When in manufacturing, the flat layer and the isolation buffer layer with the same thickness are grown at two sides of the substrate, the flexible substrate bending in the process is alleviated through a thermal annealing mode, and the subsequent lithography alignment accuracy is improved. According to the transistor and the preparation method, the maneuverability and stability of the flexible TFT and subsequent devices can be improved, the preparation process is simple, and the production cost is low.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics and flat panel display, and specifically relates to a structure of a flexible ZnO-based thin film transistor (ThinFilm Transistor, TFT) and a preparation method thereof. Background technique [0002] The development of contemporary display technology requires higher performance thin film transistors (TFT) to drive LCD pixels and AMOLED pixels. Currently, the channel materials widely used in thin film transistors are amorphous silicon (a-Si:H) and polysilicon. Amorphous silicon TFT has the advantages of simple preparation process and good uniformity, but its mobility is low ( <1cm 2 / V·s), unable to meet the current AMOLED display requirements for driving; although low-temperature polysilicon TFT has high mobility (> 10cm 2 / V·s), but it requires laser-assisted annealing and the manufacturing cost is very high, and the mass production uniformity of polycrystalline materials is poor, which ...

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Problems solved by technology

However, the current plastic substrate has poor surface flatness, and micron-scale protrusions on the surface will cause damage to the device and poor reliability; and the water and oxygen transmission rates are high, and the device is prone to aging

At the same time, due to the different thermal expansion coefficients of different film layers in the process of transistor preparation, the growth of the film, heat treatment, etc. will cause bending shrinkage and other effects on it.

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