Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

RC-LIGBT device and manufacturing method thereof

A device, N-type technology, applied in the field of RC-LIGBT devices and their production, can solve problems such as failure to turn on normally, affecting the stability and reliability of LIGBT devices, and achieve the effect of improving stability and reliability

Inactive Publication Date: 2013-11-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
View PDF2 Cites 41 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The negative resistance phenomenon is more obvious under low temperature conditions, and even the PN junction J1 formed by the P+ collector region 11 and the N-type electric field stop region 10 in the device cannot be opened normally, which seriously affects the stability and reliability of the LIGBT device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • RC-LIGBT device and manufacturing method thereof
  • RC-LIGBT device and manufacturing method thereof
  • RC-LIGBT device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] An RC-LIGBT device whose cellular structure is as follows figure 2 As shown, it includes a substrate 9, a silicon oxide dielectric layer 8 on the surface of the substrate, and an N-type drift region 7 formed of an N-type epitaxial layer on the surface of the silicon oxide dielectric layer 8; it also includes an emitter structure, a collector structure, and a gate pole structure; the emitter structure is composed of a metal emitter 1, a P+ contact region 2, an N+ source region 3 and a P-type base region 4, wherein the P-type base region 4 is located on one lateral side of the N-type drift region 7, and the P+ contact Region 2 and N+ source region 3 are located in P-type base region 4 independently of each other, and the surfaces of P+ contact region 2 and N+ source region 3 are in contact with metal emitter 1; the collector structure is composed of metal collector 13, P+ Collector region 11, N+ collector short-circuit region 12 and N-type electric field stop region 10, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an RC-LIGBT device and a manufacturing method thereof, and belongs to the field of power semiconductor devices and integrated circuits. According to the RC-LIGBT device, on the basis of a traditional RC-LIGBT structure, a P-type well region is arranged in a collector structure of the device, surrounds an N+ collector short circuit region in the collector structure and is connected with an N-type field stopping area in a short-circuited mode through connection metal. In the forward conduction process of the RC-LIGBT device, the influence on the starting process by a back N-type region can be shielded, and therefore the inherent negative resistance phenomenon of a traditional RC-LIGBT can be eliminated completely, and the stability and reliability of the device are improved. The RC-LIGBT device is suitable for the power semiconductor integrated circuits.

Description

technical field [0001] The invention belongs to the field of power semiconductor integrated circuits, and relates to a lateral insulated gate bipolar transistor (Lateral Insulated Gate Bipolar Transistor, LIGBT), in particular to a lateral reverse conduction type insulated gate bipolar transistor (Reverse Conducting-LIGBT, RC-LIGBT). Background technique [0002] Lateral Insulated Gate Bipolar Transistors (LIGBTs) are new components in power integrated circuits. It not only has the advantages of easy driving and simple control of LDMOSFET, but also has the advantages of low turn-on voltage of power transistors, large on-state current, and low loss. It has become one of the core components of modern power semiconductor integrated circuits. Literature (Shigeki T., Akio N., Youichi A., Satoshi S. and Norihito T. Carrier-Storage Effect and Extraction-Enhanced Lateral IGBT (E 2 LIGBT): A Super-High Speed ​​and Low On-state Voltage LIGBT Superior to LDMOSFET. Proceedings of 2012 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/08H01L21/331
Inventor 张金平杨文韬陈钱顾鸿鸣刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com