Aluminum-gallium co-doping zinc oxide nano-powder and preparation method for high intensity high conductivity sputtering coating target material thereof

Abstract

The invention discloses aluminum-gallium co-doping zinc oxide nano-powder and a preparation method for a high intensity high conductivity sputtering coating target material thereof. The preparation method comprises the following steps: 1, dissolving high pure metal so as to form transparent aluminum nitrate, zinc nitrate and gallium nitrate solutions; 2, dosing: putting the three kinds of solutions in containers respectively according to the proportion; 3, performing chemical precipitation: mixing the transparent solutions as per proportion and specified procedures through adopting the homogeneous precipitation method so as to prepare aluminum-gallium co-doping zinc oxide nano-powder; 4, cleaning: washing the mixed precipitate via deionized water, and fully stirring till no other irons exist in the mixture; 5, calcining: putting the nano-powder into a high temperature furnace for calcination to obtain the aluminum-gallium co-doping zinc oxide nano-powder; 6, prilling: adding adhesive into the aluminum-gallium co-doping zinc oxide nano-powder and drying to obtain aluminum-gallium co-doping zinc oxide nano-powder to be formed; 7, forming: pressing the aluminum-gallium co-doping zinc oxide nano-powder to be formed into the initial blank; 8, sintering: putting the initial blank into the high temperature furnace for free pressure sintering or gas pressure sintering.

Description

(1) Technical field: [0001] The present invention relates to a method for preparing a powder and a target, in particular to a method for preparing an aluminum-gallium co-doped nano-zinc oxide (note: hereinafter referred to as AGZO for aluminum-gallium co-doped zinc oxide) powder and a high-density and high-conductivity sputtering coating target , belongs to the field of powder metallurgy and ceramic technology. (2) Background technology: [0002] Optoelectronic devices such as solar cells and various displays such as liquid crystal displays (LCD) and mobile phone screens require transparent conductive films (TCO) as transparent conductive electrode materials. As the main material of TCO, indium tin oxide (ITO) is widely used in the above-mentioned in optoelectronic devices. However, indium is a rare mineral, which is expensive and has few reserves. Therefore, aluminum-doped zinc oxide (AZO) materials, which are cheap, conductive and transparent, are becoming a research and...

AI Technical Summary

Problems solved by technology

The main disadvantages of this method: the size of the target is limited by the pressure of the equipment and the pressure cylinder, and it is impossible to prepare a large-size target; the equipment is expensive, the investment cost is high; the production efficiency is low, the production cost is high, and the product competitiveness is not strong

The mechanism is that the sintering agent forms a liquid at high temperature (such as Bi 2 o 3 A liquid phase is formed at a temperature of about 830°C) and coated on the surface of AZO particles, thereby preventing the sublimation of AZO, and the existence of liquid helps the substance to move and shrink. However, adding sintering agent will always bring impurities to make AZO membrane performance deteriorates

[0045] All in all, the cost of preparing high-density and high-conductivity AZO targets is high

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