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Method for preparing graphene film at low temperature

A graphene film and low temperature technology, applied in the field of low temperature preparation of graphene films, can solve problems such as unfavorable large-scale preparation of graphene, and achieve the effects of avoiding processing steps and reducing preparation temperature

Inactive Publication Date: 2013-11-27
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is undoubtedly unfavorable to the large-scale preparation of graphene

Method used

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  • Method for preparing graphene film at low temperature
  • Method for preparing graphene film at low temperature

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Experimental program
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Effect test

Embodiment 1

[0018] Embodiment 1: concrete steps are:

[0019] 1) Pretreatment: Ultrasonic cleaning of copper foil (1cm*1cm) with a thickness of 25 microns and a purity of 99.8wt% in acetone, isopropanol, and deionized water for 20 minutes in sequence, and dried with nitrogen.

[0020] 2) Preparation of DLC film: A layer of DLC film was prepared on the copper substrate obtained in step 1) using radio frequency plasma enhanced chemical vapor deposition technology. The reaction gas was a mixture of methane and hydrogen with a purity of 99.999% (methane 1%), and the reaction chamber The background vacuum is Pa, the gas pressure during deposition is 266Pa, the radio frequency power is 200W, and the deposition time is 5 minutes.

[0021] 3) Graphene growth: Place the copper substrate covered with DLC film obtained in step 2) in a CVD reaction chamber, evacuate until the pressure in the reaction chamber drops below 0.1Pa, and introduce a hydrogen / argon mixed gas (hydrogen 10% ) to normal pres...

Embodiment 2

[0024] 1) Pre-treatment: The nickel foil (1cm*1cm) with a thickness of 505 microns and a purity of 99.8wt% was ultrasonically cleaned in acetone, isopropanol, and deionized water for 20 minutes, and dried with nitrogen.

[0025] 2) Preparation of patterned DLC film: A layer of DLC film was prepared on the nickel substrate obtained in step 1) by radio frequency plasma enhanced chemical vapor deposition technology, and the reaction gas was a mixture of methane and hydrogen with a purity of 99.999% (methane 1%), The background vacuum of the reaction chamber is Pa, the gas pressure during deposition is 188Pa, the radio frequency power is 200W, and the deposition time is 30 minutes.

[0026] 3) Patterned graphene growth: Place the nickel substrate covered with DLC film obtained in step 2) in the CVD reaction chamber, evacuate until the pressure in the reaction chamber drops below 0.1Pa, and then inject argon gas to normal pressure, repeat the process Step 2-3 times, control the m...

Embodiment 3

[0028] 1) Pre-treatment: ultrasonically clean the copper-nickel alloy foil (1cm*1cm) in acetone, isopropanol, and deionized water for 20 minutes in sequence, and blow dry with nitrogen.

[0029] 2) Preparation of patterned DLC film: A layer of DLC film was prepared on the copper-nickel-nickel alloy substrate obtained in step 1) by radio frequency plasma enhanced chemical vapor deposition technology, and the reaction gas was a mixture of methane and hydrogen with a purity of 99.999% (methane 1 %), the background vacuum of the reaction chamber is Pa, the gas pressure during deposition is 188Pa, the radio frequency power is 200W, and the deposition time is 10 minutes.

[0030] 3) Patterned graphene growth: place the copper-nickel alloy substrate covered with DLC film obtained in step 2) in a CVD reaction chamber, evacuate until the pressure in the reaction chamber drops below 0.1Pa, and then pass in argon gas to normal pressure, Repeat this step 2-3 times, control the mixed gas...

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Abstract

The invention discloses a method for preparing a graphene film at low temperature. The method comprises the following steps of: 1) preparing a diamond lick carbon (DLC) film on a metal base; and 2) treating the metal base covered with the DLC film in step 1) at a certain temperature under a non-oxidizing atmosphere; and graphitizing the DLC film and forming the graphene under the metal catalyzing effect. According to the method, the DLC is innovatively utilized as a precursor for the growth of the graphene, so that the preparation temperature of the graphene can be reduced, and a mask plate can be adopted in the preparation of the DLC to easily realize the graphical preparation of the graphene film.

Description

technical field [0001] The invention relates to a method for growing a material graphene film, in particular to a method for preparing a graphene film at a low temperature. Background technique [0002] Since its discovery in 2004, graphene has attracted widespread attention from scientists due to its unique crystal structure characteristics. Graphene has many unique physical and chemical properties, such as high specific surface area, excellent thermal stability, good thermal conductivity, high mechanical strength and so on. Graphene is a zero-bandgap semiconductor with a carrier mobility 100 times higher than that of silicon, a micron-scale free path and a large coherence length at room temperature, making it an ideal material for nanocircuits. In addition, graphene also has a series of properties such as perfect quantum tunneling effect and half-integer quantum Hall effect. These excellent properties make graphene have bright application prospects in nanoelectronic devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/186
Inventor 杨连乔王浪吴行阳张建华陈伟
Owner SHANGHAI UNIV
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