Fabrication method of metal oxide semiconductor transistor

Abstract

The invention provides a method for manufacturing a metal oxide semiconductor transistor. A second side wall layer is formed between a source / drain layer and a channel, and an air buried layer is formed between the surface of a semiconductor substrate and the source / drain layer. On the basis of reducing leakage current due to extension of a drain depletion layer, source drain stray capacitance is reduced, and thermal budgets are reduced.

Description

technical field [0001] The invention relates to semiconductor device manufacturing technology, in particular to a method for manufacturing metal oxide semiconductor transistors. Background technique [0002] As we all know, the use of a semiconductor substrate similar to bulk silicon as the first-generation silicon substrate has been challenged in many ways, so it is proposed to add an insulating layer to the semiconductor substrate, that is, silicon-on-insulator (SOI, Silicon- On-Insulator) technology. like figure 1 As shown, the SOI technology based on bulk silicon 100 is used as an example for illustration. The SOI technology divides the bulk silicon 100 into three layers, and the surface is a thin layer of top silicon 102 (TopSilicon), which is used to manufacture semiconductor devices. The top silicon 102 The thickness ranges from 200 angstroms to several microns, depending on different applications; under the top layer of silicon 102 is an insulating buried layer (bu...

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Problems solved by technology

[0006] figure 2 In the SOI-based MOS transistor, although BOX08 is "L"-shaped, which can reduce the leakage current caused by the expansion of the drain depletion layer, BOX08 is formed by thermal oxidation, and the extremely high thermal oxidation temperature will introduce too much heat Budget, and because BOX08 is generally an oxide layer, the parasitic capacitance between the source or drain and the substrate is very large, which affects the electrical performance of the device

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