Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A multi-ceramic-layer patterned structure substrate for optical and electronic devices

A technology of electronic devices and ceramic layers, applied in the field of electronics, can solve problems such as difficult heat transfer, electrical conduction short circuit, etc., and achieve the effects of solving heat dissipation problems, good electrical isolation and thermal isolation, and high withstand voltage breakdown performance

Active Publication Date: 2013-10-16
SUZHOU JINGPIN OPTOELECTRONICS
View PDF4 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the multiple optical and / or electronic devices are coupled to a ceramic component with a single interface, it will cause difficulty in heat transfer between the coupled optical and / or electronic devices, and may cause electrical conduction short circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A multi-ceramic-layer patterned structure substrate for optical and electronic devices
  • A multi-ceramic-layer patterned structure substrate for optical and electronic devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] as attached figure 1 As shown, the multi-ceramic layer patterned structural substrate for optical and electronic devices described in this embodiment includes an aluminum or aluminum alloy substrate 10, and a SiC pressure-resistant ceramic layer 20 and AlN are sequentially formed on the metal substrate. High thermal conductivity ceramic layer 40; there is an aluminum transition layer 30 between the SiC pressure-resistant ceramic layer 20 and the AlN high thermal conductivity ceramic layer 40, and the AlN high thermal conductivity ceramic layer 40 and the aluminum transition layer 30 are selectively selected by a mask Etching forms a plurality of isolation pedestals 50; and forming a metal circuit layer (not shown in the figure) on the uppermost layer of the multi-ceramic layer of the isolation pedestals. The SiC pressure-resistant ceramic layer is prepared by an arc ion plating deposition method, with a thickness of 200 um. Wherein, the step of the aluminum transition ...

Embodiment 2

[0024] as attached figure 2 As shown, the multi-ceramic layer patterned structural substrate for optical and electronic devices described in this embodiment includes an aluminum or aluminum alloy substrate 10, and a SiC pressure-resistant ceramic layer 20 and AlN are sequentially formed on the metal substrate. High thermal conductivity ceramic layer 40; there is an aluminum transition layer 30 between the SiC pressure-resistant ceramic layer 20 and the AlN high thermal conductivity ceramic layer 40, and an active braze is arranged between the aluminum alloy substrate 10 and the SiC pressure-resistant ceramic layer 20 Welding layer 60; and selectively etch the AlN high thermal conductivity ceramic layer 40 and the aluminum transition layer 30 through a mask to form a plurality of isolation bases 50; and form on the uppermost layer of the multi-ceramic layer of the isolation base metal circuit layer (not shown in the figure). The SiC pressure-resistant ceramic layer is prepare...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a multi-ceramic-layer patterned structure substrate for optical and electronic devices. The multi-ceramic-layer patterned structure substrate comprises a metal substrate, wherein a voltage-withstanding ceramic layer and a high heat-conducting ceramic layer are sequentially formed on the metal substrate; a transition layer is arranged between the voltage-withstanding ceramic layer and the high heat-conducting ceramic layer; multiple isolation bases are formed by selective etching on the high heat-conducting ceramic layer and the transition layer through a mask; and a metal circuit layer is formed on every isolation base. The multi-ceramic-layer patterned structure substrate for optical and electronic devices has a metal substrate in a relatively large size, can accommodate multiple optical and / or electronic devices, and is provided with good electrical isolation and thermal isolation between the multiple optical and / or electronic devices.

Description

technical field [0001] The invention belongs to the field of electronic technology, and more specifically, the invention relates to a multi-ceramic layer patterned structural substrate for optical and electronic devices. Background technique [0002] Devices used in optics and / or electronics, such as integrated circuits or laser diodes, require the use of thermally conductive materials for heat transfer. For this purpose, a metallic base body is used, for example a copper base body, and an electrical isolation is often required between the optical and / or electronic components and the metal base body. And some ceramic materials have higher heat transfer efficiency and are electrically insulating. For this purpose, highly thermally conductive ceramic materials are frequently used as intermediate materials for providing electrical isolation while still maintaining thermal conductivity between the optical and / or electronic components and the metal base body. In order to provid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/14H01L23/373
Inventor 高鞠
Owner SUZHOU JINGPIN OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com