Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing copper-zinc-tin-sulfide solar cell absorbing layer with homogeneous solution method

A solar cell, copper-zinc-tin-sulfur technology, applied in circuits, electrical components, final product manufacturing, etc., can solve problems such as unfavorable production applications, highly toxic hydrazine, poor safety, etc., to achieve strong repeatability, low cost, Avoiding the effect of residual carbon

Inactive Publication Date: 2013-10-09
BEIJING UNIV OF TECH
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But they used poisonous and extremely poor safety hydrazine as a solvent, which has some fatal disadvantages: first, hydrazine is highly toxic and has a strong corrosive effect on skin, eyes, etc.; second, it has a high heat of combustion, It is very dangerous during the reaction; and hydrazine is very corrosive to containers such as plastic, glass and metal, so it is very unfavorable for large-scale production applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing copper-zinc-tin-sulfide solar cell absorbing layer with homogeneous solution method
  • Method for preparing copper-zinc-tin-sulfide solar cell absorbing layer with homogeneous solution method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1) Add 1.0230g CuCl 2 2H 2 O, 0.4089g ZnCl 2 , 0.6769g SnCl 2 2H 2 O, 1.8031g TAA was successively dissolved in 20ml isopropanol solvent, fully stirred at room temperature until a pale yellow transparent solution was formed;

[0028] 2) Immerse the soda-lime glass on the Mo-coated substrate in the above transparent solution, pull it out of the liquid surface, place the glass piece at an angle for 2 minutes, put it in an oven at 150°C, and dry it for 10 minutes under non-blast condition;

[0029] 3) Repeat step 2) to immerse, lift and dry the film 6 times;

[0030] 3) Place the obtained precursor film sample and sulfur powder in a graphite box, place the sulfur powder in the groove below the film sample, sulfur vapor can fill the entire graphite box through the slot, and place the graphite box in a tubular annealing furnace. in N 2 The annealing treatment is carried out under the protection of atmosphere, and the whole vulcanization annealing process is controlled ...

Embodiment 2

[0033] 1) Add 1.0230g CuCl 2 2H 2 O, 0.4089g ZnCl 2 , 0.6769g SnCl 2 2H 2 O, 1.8031g TAA was successively dissolved in 20ml isopropanol solvent, fully stirred at room temperature until a pale yellow transparent solution was formed;

[0034]2) Immerse the soda-lime glass on the Mo-coated substrate in the above transparent solution, pull it out of the liquid surface, place the glass piece at an angle for 2 minutes, put it in an oven at 150°C, and dry it for 10 minutes under non-blast condition;

[0035] 3) Repeat step 2) to immerse, lift and dry the film 6 times;

[0036] 3) Place the obtained precursor film sample and selenium particles in a graphite box, place the selenium particles in the groove below the film sample, the selenium vapor can fill the entire graphite box through the slot, and place the graphite box in a tubular annealing furnace. in N 2 The annealing treatment is carried out under the protection of atmosphere, and the whole vulcanization annealing process...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a copper-zinc-tin-sulfide solar cell absorbing layer with a homogeneous solution method and belongs to the field of functional materials. The method comprises the following steps that (a) a substrate is washed, (b) front-body solution is prepared, (c) a front-body thin film is prepared, and (d) annealing processing is carried out. According to the method for preparing the copper-zinc-tin-sulfide solar thin film, expensive raw materials and equipment are of no need, each technology step can be well controlled, toxic macromolecule solvent is of no need, a large amount of residual carbon in the copper-zinc-tin-sulfide solar thin film preparing process is avoided, large-grained and compact copper-zinc-tin-sulfide solar cell absorbing layer thin film preparing is facilitated, the technology is simple, cost is low, repeatability is high, a new idea is provided for environment-protection low-cost high-conversion-efficiency copper-zinc-tin-sulfide thin-film solar cell technology development, and the potential of large-scale industrial production is achieved.

Description

technical field [0001] The invention belongs to the field of functional materials, and in particular relates to a method for preparing a copper-zinc-tin-sulfur solar battery absorption layer thin film by a homogeneous solution method. technical background [0002] The energy problem is a global problem that restricts social development. As an inexhaustible renewable and clean energy, solar energy has increasingly attracted widespread attention from all over the world. At present, solar cells mainly include crystalline silicon solar cells, amorphous silicon solar cells and compound thin film solar cells. Crystalline silicon cells have always been the most widely used solar cells, but their high manufacturing cost is also a major factor restricting their further promotion and application. Amorphous silicon solar cells, due to the defects of the material itself, the photoelectric efficiency of amorphous silicon solar cells has a decline effect, which eventually leads to poor s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 汪浩郑慧娟栗晓辰孙玉绣刘晶冰严辉朱满康
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products