Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silver-alloy sputtering target for conductive-film formation, and method for producing same

A technology of conductive film and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, metal rolling, sputtering coating, etc., can solve problems such as short-circuit failure, migration, etc. Effect

Active Publication Date: 2013-09-11
MITSUBISHI MATERIALS CORP
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As such a wiring film, if pure Ag is used, for example, migration occurs and short-circuit failures are likely to occur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silver-alloy sputtering target for conductive-film formation, and method for producing same
  • Silver-alloy sputtering target for conductive-film formation, and method for producing same
  • Silver-alloy sputtering target for conductive-film formation, and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0084] Ag with a purity of 99.99% by mass or more and In as an additive raw material with a purity of 99.9% by mass or more were prepared and filled in a high-frequency induction melting furnace built with a black lead crucible. The total mass at the time of melting was set at about 1100 kg.

[0085] At the time of smelting, Ag was first smelted, and after Ag was melted, raw materials were added so that the target composition shown in Table 1 was obtained. The alloy molten metal is thoroughly stirred by the stirring effect of induction heating, and then cast in a cast iron mold.

[0086] The shrinkage cavity portion of the ingot obtained by this casting was cut off, and the surface in contact with the mold was removed by surface shaving, so that a rectangular parallelepiped ingot with an approximate size of 640×640×180 (mm) was obtained as a complete part.

[0087] This ingot was heated to 770° C., and rolling was repeated in one direction to extend from 640 mm to 1700 mm. T...

Embodiment 2～10、 comparative example 1～10）

[0092] Same as in Example 1, changing within the following ranges: the heating temperature of the ingot before hot rolling is 510-880°C, the temperature of the plate after final rolling is 9.0-24.2mm, and the total number of passes is 10-14 times, and make the total rolling rate 87 to 95%. In addition, targets were prepared from the target composition shown in Table 3, the conditions from the last pass to the penultimate pass shown in Table 1, and the conditions of the cooling rate after hot rolling shown in Table 3. The cooling rate described in Table 3 means the cooling by water spray, and the "anhydrous cooling" means only standing cooling. However, the thickness of the target after machining shall be within the range of 6 to 21 mm.

Embodiment 11～13、 comparative example 11）

[0094] Melting and casting were carried out in the same manner as in Example 1 to produce an ingot with an approximate size of 640×640×60 (mm). This ingot was heated to 700° C., followed by hot rolling to obtain a plate material with an approximate size of 1200×1300×16 (mm).

[0095] A total of 6 passes were repeated in this hot rolling. Among them, the conditions from the final pass to the penultimate third pass (strain rate per pass, reduction rate, sheet temperature after the pass) were set as in Table 2. The total rolling ratio of the whole hot rolling was 73%.

[0096] After the hot rolling, the rolled plate was quenched under the conditions shown in Table 3.

[0097] After cooling, the plate was passed through a roll leveler to correct the strain caused by quenching, and machined to a size of 1000×1200×12 (mm) as a target.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

One embodiment of the sputtering target having a component composition containing In in the amount of 0.1-1.5 mass%, with the remainder comprising Ag and inevitable impurities, wherein the average particle diameter of the alloy crystal grains is 30mum or more and less than 150mum, and the variation in the particle diameter of the crystal grains is 20% or less of the average particle diameter. One embodiment of the method for producing the sputtering target in which a melt-cast ingot having the component composition is subjected to a hot-rolling step, a cooling step, and a machining step, in this order, wherein: the hot-rolling step involves one or more passes of finish hot rolling under conditions in which the rolling reduction for each pass is 20-50%, the strain rate is 3-15 / sec, and the temperature after the pass is 400-650 DEG C; and the cooling step involves quickly cooling at a cooling rate of 200-1000 DEG C / min.

Description

technical field [0001] The present invention relates to a silver alloy sputtering target for forming a conductive film such as a reflective electrode of an organic EL element or a wiring film of a touch panel, and a manufacturing method thereof. [0002] This application claims priority based on Patent Application No. 2012-002072 for which it applied in Japan on January 10, 2012, and uses the content here. Background technique [0003] In an organic EL element, a voltage is applied between an anode and a cathode formed on both sides of an organic EL light-emitting layer, and holes and electrons are injected into the organic EL film from the anode and the cathode, respectively. And in the organic EL light-emitting layer, light is emitted when holes and electrons are combined. An organic EL element is a light-emitting element using this light-emitting principle, and has recently attracted attention as a light-emitting element for a display device. There are a passive matrix ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B21B3/00C22C5/06H01L51/50H05B33/10H05B33/26
CPCC22C5/06C23C14/3414H01B1/02H10K50/818C23C14/34H01L21/02266H01L21/2855H01L2224/75186H10K71/16
Inventor 小见山昌三船木真一小池慎也奥田圣
Owner MITSUBISHI MATERIALS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com